Observation of room-temperature resonant photoluminescence in porous silicon

Structural property of nanoporous silicon: evidence of near ultraviolet photoluminescence

“…The presence of a thin oxide layer at the surface of region B was creating an obstacle in identifying a clear pore boundary, and hence, we use a large error bar for mentioning the average pore size. However, the magnified cross-sectional view of such a pore supports the above claim like the one presented in the inset of figure 1(a) in our previous publication [25]. Taking into account all the aforementioned facts, we can justify the pore growth mechanism in this study as follows: short and tissue like pore branching often occurs during ECE in the presence of isotropic photoexcited holes [20] up to a limited depth.…”

“…We have already addressed a blue shifting of such a resonant feature as a function of excitation energy (i.e. with decreasing excitation wavelength) in oxidized PS samples on the ground of strong coupling of electronic and Si-O vibrational excitations during localization of excitons at the Si/SiO 2 interfacial states [25]. The aforementioned discussion is also true in the present study for explaining the resonant signal at ∼467 nm for an excitation wavelength of 320 nm, and it is supported by our FTIR study, which is discussed in the following.…”

“…The PL measurements were monitored on a Hitachi F-4500 fluorescence spectrophotometer (optical resolution of 0.2 nm) with an effective power density on the sample surface of 0.34 mW cm −2 at RT. Details of the PL measurement procedure are given in [25]. The chemical composition of anodized Si was scrutinized not only by means of energy dispersion spectroscopy (EDS) during SEM but also with the help of Fourier transform infrared (FTIR) spectroscopy.…”

Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

“…The 459 nm (2.7 eV) vibronic peak is attributed to a blue defect–related emission band in amorphous SiO 2 at 2.7 eV, ascribed to a Si atom with only two neighbouring oxygen 44 45 . The 467 nm peak can be attributed to the finite potential barrier at Si/SiO 2 interface or Si/Si–O–R interface 46 47 .…”

Research on Processing Technology of Multi-Layer Heterogeneous Material Composite Micron Cantilever Beam Structure

“…MEMS (Micro Electro Mechanical System) technology is the inheritance and development of microelectronics technology. Due to the miniaturization of scale and the integration of dimension, it has become a new scientific field involving optics, medicine, electronic engineering, mechanical engineering, and other multidisciplinary cross-discipline [2]. MEMS devices and micromachining technology have the characteristics of miniaturization, microelectronics integration, and high precision [3][4][5][6][7][8][9][10][11].…”