1987
DOI: 10.1557/proc-104-449
|View full text |Cite
|
Sign up to set email alerts
|

Observation of the Ga Self-Interstitial Defect in GaP

Abstract: The first experimental evidence of an isolated self-interstitial defect in an as-grown semiconductor is reported. An optically detected magnetic resonance spectrum observed in GaP [0] was identified as arising from a Ga selfinterstitial. The large isotropic hyperfine splittings (g = 2.003 (3), A(69Ga) = 741(5)×10−4 cm−1 and A(71Ga) -941[5]×10− 4 cm−1) revealed that a single Ga atom at a Td-symmetric site is the center of the defect. The interstitial nature is established by theoretical considerations. The spin… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2003
2003
2011
2011

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 13 publications
(1 citation statement)
references
References 13 publications
0
1
0
Order By: Relevance
“…The spin concentration in GaP nanoparticles exceeds 10 19 cm −3 . In terms of the optically detected magnetic resonance (ODMR) observation by Lee [6], the possible electronic structure of Ga i defects based on their lattice sites was considered as the double positive charge state, Ga i ++ . Three stable charge states in energy gap for Ga i , at least two defect energy levels, +/++ and ++/+++, could be considered for defect-defect interactions.…”
Section: Resultsmentioning
confidence: 99%
“…The spin concentration in GaP nanoparticles exceeds 10 19 cm −3 . In terms of the optically detected magnetic resonance (ODMR) observation by Lee [6], the possible electronic structure of Ga i defects based on their lattice sites was considered as the double positive charge state, Ga i ++ . Three stable charge states in energy gap for Ga i , at least two defect energy levels, +/++ and ++/+++, could be considered for defect-defect interactions.…”
Section: Resultsmentioning
confidence: 99%