Observation of Transient Enhanced Diffusion in B⁺-Implanted Si by Buried Boron Isotopes

Abstract

A method was developed to investigate the transient enhanced diffusion (TED) of implanted boron by observing the redistribution of buried boron isotopes in the implanted region. The buried layer was created by 10B+ implantation and the implant damage was induced by 11B+ implants at various doses. With low-dose ion implantation, implanted dopants exhibit similar TED behavior as embedded dopants. For implant doses higher than 5×1014 cm-2, the uphill diffusion of 10B near the immobile 11B peak indicates the presence of TED under boron interstitial clustering. The presence of TED remains in the projected range for the high-dose implantation at 25 keV even though dense dislocations exist. However, as the implant energy decreases to 15 keV, TED is prohibited from the surface to the project range.

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

“…9,13,[42][43][44][45] In some cases, pile-up has been observed in the vicinity of a surface or interface, 9,42,44 sometimes within 1 nm of the surface. Such peaks impose a severe test of secondary-ion-mass spectroscopy ͑SIMS͒.…”

Diffusion of Boron near Projected Ranges of B and BF2 Ions Implanted in Silicon

“…Previous research has demonstrated that the diffusion behavior of 10 B is similar to that of 11 B when both are implanted at a dose of 5 Â 10 13 cm À2 . 8) The density of residual dislocation loops was monitored by planview transmission electron microscopy (TEM).…”

“…An approach has been developed to observe the diffusion in the peak region of B þ implantation profiles by using an embedded layer of boron isotopes. 8) This work employs this method to analyze boron reactions near the peak region of the boron profiles during annealing following the high-dose implantations of B þ and BF 2 þ . The two implantation species exhibit different TED behaviors and boron clustering upon annealing at 750 C.…”