A method was developed to investigate the transient enhanced diffusion (TED) of implanted boron by observing the redistribution of buried boron isotopes in the implanted region. The buried layer was created by 10B+ implantation and the implant damage was induced by 11B+ implants at various doses. With low-dose ion implantation, implanted dopants exhibit similar TED behavior as embedded dopants. For implant doses higher than 5×1014 cm-2, the uphill diffusion of 10B near the immobile 11B peak indicates the presence of TED under boron interstitial clustering. The presence of TED remains in the projected range for the high-dose implantation at 25 keV even though dense dislocations exist. However, as the implant energy decreases to 15 keV, TED is prohibited from the surface to the project range.

Applications of Micro-Electro-Mechanical Systems (MEMS) sensors have developed rapidly in the last decade, increasing the need of Failure Analysis (FA) to characterize abnormalities and to identify failure modes of various types of MEMS devices. One of the greatest challenges is removal of the sealing cap from the MEMS device without any impact to the moveable sensing elements. A novel non-destructive technique has been successfully developed using KOH wet chemical etching followed by application of ex-situ hand sticking to deprocess the sealing cap from an accelerometer device. This new approach provides a quick and reliable way to remove the sealing cap from a MEMS device.