1994
DOI: 10.1103/physrevb.49.4908
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Observation of ultrathin metastable fcc Ti films on Al(110) surfaces

Abstract: High-energy ion-scattering spectroscopy, x-ray-photoemission spectroscopy, and low-energy electron diffraction (LEED) were used to study the growth of very thin Ti films on Al(110) surfaces at room temperature. The Al surface peak areas in the backscattering spectra of 0.96-MeV He+ ions, incident along the [1 10] direction of AI(110), decreased sharply during the deposition of the first five monolayers of Ti.This suggests a growth model in which a pseudomorphic Ti film with a fcc structure forms, shadowing the… Show more

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Cited by 54 publications
(20 citation statements)
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“…The relative integrated intensity of the fcc Ti phase is found to reduce almost exponentially with increasing film thickness, suggesting that the fraction of the fcc Ti phase decreases with increasing film thickness. Observation of metastable fcc Ti phase has also been reported in bulk Ti powders during mechanical milling of Ti [18][19][20] and also ultrathin ($2-50 nm thick) epitaxial films [12][13][14][15][16][17] on various substrates. The strain-free cubic lattice parameter of 0.41638 nm obtained for fcc Ti in the case of 5 min deposited film is in close agreement with the cubic lattice parameters reported earlier in mechanically milled polycrystalline Ti powder (0.4356 nm [19] and 0.4237 nm [20]), in Ti epitaxial films (0.433 nm [13] and 0.415 nm [16]) and also from ab initio calculations (0.411 nm [9]).…”
Section: Resultsmentioning
confidence: 94%
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“…The relative integrated intensity of the fcc Ti phase is found to reduce almost exponentially with increasing film thickness, suggesting that the fraction of the fcc Ti phase decreases with increasing film thickness. Observation of metastable fcc Ti phase has also been reported in bulk Ti powders during mechanical milling of Ti [18][19][20] and also ultrathin ($2-50 nm thick) epitaxial films [12][13][14][15][16][17] on various substrates. The strain-free cubic lattice parameter of 0.41638 nm obtained for fcc Ti in the case of 5 min deposited film is in close agreement with the cubic lattice parameters reported earlier in mechanically milled polycrystalline Ti powder (0.4356 nm [19] and 0.4237 nm [20]), in Ti epitaxial films (0.433 nm [13] and 0.415 nm [16]) and also from ab initio calculations (0.411 nm [9]).…”
Section: Resultsmentioning
confidence: 94%
“…Electronic structure calculations have also predicted the stability of the x and c phases in Ti [9] at high pressures. Apart from these four types of phases mentioned above, Ti has also been reported to exhibit a cubic closepacked (ccp) structure in very thin epitaxial films [12][13][14][15][16][17] and in high-energy milled powder [18][19][20]. The formation of this phase has never been anticipated in the equilibrium phase diagram of Ti [2].…”
Section: Introductionmentioning
confidence: 97%
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“…In addition, an fcc phase was reported in an investment cast Ti-6Al-4V alloy during different heat treatment processes [2] and very recently in a surface layer after high energy shot peening [3]. Basically, the formation of the fcc phase is not anticipated from the equilibrium phase diagram of Ti [4], but there are experiments showing an fcc structure in very thin epitaxial films [5,6] and in high-energy milled powders [7,8]. Very recently, an hcp to fcc phase transformation was reported in a bulk commercial purity α-Ti during cryogenic channel die compression [9] and cold rolling [10].…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, elemental metals and alloys have been found to form epitaxially in structures which are unstable in bulk form. [18][19][20][21][22] Recently, the topic of surface alloy formation in bulk immiscible systems has attracted considerable attention. [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42] These systems are usually strained due to film/substrate lattice mismatch.…”
Section: Introductionmentioning
confidence: 99%