Obtaining quantitative information on amorphous layer thickness on crystal surface using X-ray diffraction under specular reflection conditions

Golovin, A.L.; Имамов, Р. М.

doi:10.1002/pssa.2210800161

Cited by 20 publications

(10 citation statements)

References 2 publications

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“…The combination of Bragg diffraction and total external reflection ͑TER͒ effects in grazing-incidence x-ray diffraction ͑GID͒ opens up a wealth of possibilities in the study of thin surface layers of crystals. [1][2][3][4] GID has been applied with success to investigations of the surface treatment and surface oxidation of semiconductor wafers, 5,6 to studies of structure transformations during ion implantation, [7][8][9] and to analysis of strain relaxation in epitaxial layers 1,10,11 and multilayers. 12 The measurements of diffuse scattering ͑DS͒ in GID can provide additional information on crystal lattice defects in surface layers.…”

Section: Introductionmentioning

confidence: 99%

Diffuse scattering from interface roughness in grazing-incidence x-ray diffraction

Степанов¹,

Kondrashkina²,

Schmidbauer³

et al. 1996

Phys. Rev. B

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A theory of x-ray diffuse scattering from interface roughness in grazing-incidence diffraction ͑GID͒ is presented. The theory assumes dynamical diffraction of x rays from perfect multilayers with the diffuse scattering from roughness calculated in the distorted-wave Born approximation. This permits the calculation of scattering due to roughness at all points on the diffraction curves, including the vicinity of the Bragg peaks. It is shown that the measurements of diffuse scattering in GID can provide information on atomic ordering at crystal interfaces which is not accessible by usual x-ray specular reflection and nonspecular x-ray scattering. The theory is found to be in good agreement to the two GID experiments carried out with an etched Ge surface and an AlAs/GaAs superlattice at the Cornell High-Energy Synchrotron Source and European Synchrotron Radiation Facility, respectively. In the case of the etched Ge surface, an anti-Yoneda dip in the diffuse scattering pattern at the Bragg peak and two symmetrical shoulders on the Bragg curve wings have been found and explained. In the case of the AlAs/GaAs superlattice, the diffuse scattering has been separated from GID by means of high-resolution measurements. A comparison between diffuse scattering in GID and diffuse scattering in grazing incidence far from the diffraction conditions has shown that the atomic ordering was preserved in the interface roughness, while it was partially destroyed in the surface roughness. ͓S0163-1829͑96͒05035-7͔

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Section: Introductionmentioning

confidence: 99%

Diffuse scattering from interface roughness in grazing-incidence x-ray diffraction

Степанов¹,

Kondrashkina²,

Schmidbauer³

et al. 1996

Phys. Rev. B

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“…The surface was first polished chemically and mechanically and etched to remove a possibly disturbed layer. The thickness of the residual oxide layer on the surface, not exceeding 30/~, was measured by the method of X-ray diffraction in the grazing geometry (Aleksandrov, Afanas'ev, Melkonyan & Stepanov, 1984;Golovin & Imamov, 1983;Golovin, Imamov & Stepanov, 1984). The specimen was placed in a specially designed gas-flow proportional detector described elsewhere (Mukhamedzhanov & Le cong Qui, 1985), which recorded the photoelectron emission from the entrance surface under the Laue-diffraction conditions at different (including grazing) incidence angles of X-rays.…”

Section: Methodsmentioning

confidence: 99%

Determination of the photoelectron emission probability with inclined X-ray Laue diffraction

Afanas’ev¹,

Имамов²,

Mukhamedzhanov³

et al. 1986

Acta Cryst Sect A

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A simple relation has been established between the Fourier component of the probability density P(z) of photoelectron emission from different depths of a crystal and the angular dependence of the emission of photoelectrons formed in inclined X-ray Laue diffraction, which for the first time permitted the use of a direct method for the reconstruction of the P(z) function. Accurate measurements of the angular dependence of photoelectron emission were carried out on a silicon single crystal with diffraction of Cu Kα radiation for different energy ranges. Photoelectrons were recorded by a proportional gas counter specially designed for the energy analysis of photoelectrons under inclined Laue diffraction conditions. The laws predicted by the theory have been fully confirmed, and the corresponding P(z) functions have been obtained.

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“…It has also been suggested that there are very thin (---10,~) amorphous films on the specimen surface. On the basis of this theory (Aleksandrov, Afanas'ev, Melkonyan & Stepanov, 1984) the thicknesses of amorphous layers on the surface of silicon crystals have been determined experimentally (Golovin & Imamov, 1983b). The measurements were taken in the integral angular mode and the data obtained were confirmed by ellipsometry data.…”

Section: Introductionmentioning

confidence: 99%

A new method for surface analysis of crystals using X-ray diffraction under the specular reflection conditions

Aleksandrov¹,

Afanas'ev²,

Golovin³

et al. 1985

J Appl Cryst

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A new method is suggested for simultaneous determination of small misorientations of the surface from the chosen crystallographic plane and the thickness of the surface amorphous layer. The method is based on X-ray diffraction experiments under specular reflection conditions. The determination of misorientation consists of the comparison of diffraction curve intensities for hkl and h-k?/-reflections obtained from the plane normal to the crystallographic plane along which the crystal surface is cut. The accuracy of the determination exceeds the accuracy known for other methods. The amorphous layer is considered to be either an oxide film or any other disordered layer having no crystal structure. The layer thickness is determined from the consideration of the diffraction curve shapes using comparison with theoretical calculations. The method provides detection of layers --~5 A in thickness, which seems to be unique for X-ray diffraction methods. The method may find wide application in the surface analysis of perfect crystalline specimens, in particular, of materials used in semiconductor microelectronics.

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Obtaining quantitative information on amorphous layer thickness on crystal surface using X-ray diffraction under specular reflection conditions

Cited by 20 publications

References 2 publications

Diffuse scattering from interface roughness in grazing-incidence x-ray diffraction

Diffuse scattering from interface roughness in grazing-incidence x-ray diffraction

Determination of the photoelectron emission probability with inclined X-ray Laue diffraction

A new method for surface analysis of crystals using X-ray diffraction under the specular reflection conditions

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