Determination of the photoelectron emission probability with inclined X-ray Laue diffraction

Abstract

A simple relation has been established between the Fourier component of the probability density P(z) of photoelectron emission from different depths of a crystal and the angular dependence of the emission of photoelectrons formed in inclined X-ray Laue diffraction, which for the first time permitted the use of a direct method for the reconstruction of the P(z) function. Accurate measurements of the angular dependence of photoelectron emission were carried out on a silicon single crystal with diffraction of Cu Kα radiation for different energy ranges. Photoelectrons were recorded by a proportional gas counter specially designed for the energy analysis of photoelectrons under inclined Laue diffraction conditions. The laws predicted by the theory have been fully confirmed, and the corresponding P(z) functions have been obtained.

Structural and electrical investigation of high temperature annealed As-implanted Si crystals

“…The highest energy band ͑6.2ഛ E ഛ 6.9 keV͒, containing mainly lowenergy-loss Si K-photoelectrons with an associated escape depth L = 65 nm, 14 was used in the present experiments. Owing to a relatively low implantation depth, the x-ray diffraction measurements were carried out by a triple crystal diffractometer ͑TCD͒ with a Si double reflection monochromator for selecting the Cu K␣ 1 radiation as a probe and a high quality Si analyzer crystal, both ͓001͔ oriented.…”

Structural properties of Zn-diffused InP layers

“…The XRSW experiments were performed using the above mentioned geometry and the emitted electrons were measured using a special detector described elsewhere. 9 Briefly, the sample was mounted inside a gas-flow proportional counter provided with mylar windows transparent for x-rays. The XRP signal was recorded by a gold-plated tungsten wire 20 m in diameter and parallel to the sample surface.…”

Quantitative X-ray standing-wave phase analysis by means of photoelectrons

“…Analysis of experimentally reconstructed P(z) functions showed that for low-energy-loss photoelectrons (high-energy side of the emission spectrum) with the smallest escape depth, a simple exponential function provides a satisfactory approximation (Afanas'ev et al, 1986),…”

“…The most important question in the quantitative analysis of XSW data is the reliability of the values of the photoelectron escape depths. In general, the problem of the determination of the P(z) function is rather complicated (Thomas et al, 1975;Liljequist et al, 1978;Afanas'ev et al, 1986). The P(z) function depends not only on the characteristics of the material under investigation, but also on the experimental setup (energy resolution, angular divergences, etc.…”