OC-48 capable InGaAsN vertical cavity lasers

Jackson, Andrew W.; Naone, R.L.; Dalberth, Mark J.; Smith, Joseph M.; Malone, K. J.; Kisker, D. W.; Klem, John F.; Choquette, Kent D.; Serkland, Darwin K.; Geib, K.M.

doi:10.1049/el:20010232

Cited by 79 publications

(24 citation statements)

References 5 publications

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“…In an ideal quantum well [1], the radiative current, I rad ∝ E g 2 and we would therefore expect to measure an increase in I rad with pressure. In contrast, at threshold for InP-based devices, the Auger current, 3 Aug th…”

Section: Pressure Effectsmentioning

confidence: 99%

“…In contrast, GaAs is an ideal material for the production of VCSELs and it is therefore highly desirable to produce 1.3 -1.55 µm monolithic VCSELs based upon GaAs. GaInNAs/GaAs quantum well structures have been proposed to achieve this aim [2] and have already been successfully demonstrated with output powers in excess of 1 mW [3]. In addition to allowing the possibility of vertical integration, GaInNAs/GaAs based lasers at 1.3 µm have also shown improved temperature stability.…”

Section: Introductionmentioning

confidence: 99%

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Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 μm quantum well lasers

Sweeney

Jin

Tomić

et al. 2003

Physica Status Solidi (b)

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From measurements of the threshold current and lasing energy as a function of pressure in InGaAsP/InP, AlGaInAs/InP and GaInNAs/GaAs based multiple quantum well lasers we determine the relative importance of the monomolecular, radiative and Auger recombination processes. For the InP based devices, we find that a simple combination of radiative and non-radiative Auger recombination can fully explain the pressure dependence of the threshold current where the threshold carrier density is approximately constant as a function of pressure. For the GaInNAs/GaAs devices we observe a large increase in threshold current with pressure. This we show is due to the interaction of the nitrogen level with the conduction band which gives rise to an increased conduction band effective mass resulting in an increase in threshold carrier density of ~12% over 10 kbar. This large increase in n th increases the monomolecular, radiative and unusually, the Auger recombination current with pressure explaining the large increase in threshold current with pressure.1 Introduction The development of cheap, temperature-insensitive lasers operating around 1.3 µm and 1.55 µm has for many years been the subject of great attention in the optoelectronics community. Due to the recent emergence and increased demand for metro and Cable Television (CATV) applications, research into efficient devices operating at these wavelengths has gained considerable momentum. The development of 1.3 µm lasers has grown relatively in importance as demand continues for short-haul communications links. In addition, semiconductor lasers operating over the range 1.4 µm to 1.5 µm are becoming of interest as laser pump sources for Raman amplifiers. The III-V materials system InGaAs(P)/InP has been successfully used to produce lasers at both 1.3 µm and 1.55 µm. In spite of the commercial success of these devices, they remain far from ideal due to material and structural dependent problems such as Auger recombination, optical losses and carrier leakage [1]. These give rise to both higher than optimum threshold current densities and high temperature sensitivity over the required temperature range of operation, (typically -4 0 °C to +80 °C), requiring complex and expensive temperature control circuitry. Alternative improved materials have been sought after to overcome these problems.

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Section: Pressure Effectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 μm quantum well lasers

Sweeney

Jin

Tomić

et al. 2003

Physica Status Solidi (b)

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“…Appropriate mixtures of N (<5%) and In in GaInNAs can be grown pseudomorphically on GaAs and have already demonstrated an output power of 1.43 mW at 1.26 µm under c.w. operation at room temperature [6]. There is also experimental evidence that GaInNAs has an intrinsically broad gain spectrum due the variation in local band gap arising from alternative stable lattice N sites, which originate from the various combinations of nearest neighbour Ga and In atoms in a random alloy [7].…”

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confidence: 99%

Gain‐cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques

Knowles

Tomić

Shao

et al. 2003

Physica Status Solidi (b)

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PACS 42.55.Px, 42.60.Lh, 78.45.+h, 78.67.De Vertical-cavity surface-emitting lasers with a GaInNAs quantum well active region have been studied as a function of hydrostatic pressure and compared with similar edge-emitting lasers. The variation of threshold currents and lasing energies is studied and compared with a gain model calculated from a 10 band k · p model which includes the N interaction in the conduction band. Good agreement is obtained between experiment and model and indicates that a large Lorentzian broadening parameter of 17.5 meV applies. The gain spectrum is therefore broad and the devices have a large degree of temperature stability and growth error tolerance.Introduction The commercial realization of VCSELs operating in the key telecommunication range of 1.3 -1.55 µm has been hampered by two principal factors which particularly affect the InGaAsP/InP material system often used for lasers at these wavelengths. Firstly, the poor refractive index contrast and high thermal impedance in epitaxial layers available to form the distributive Bragg reflectors (DBRs) [1]. One alternative, is to wafer fuse highly reflective AlGaAs/GaAs Bragg stacks to the InGaAsP active region [2] but such devices are hindered by high resistance p-junctions and poor yield. The second problem concerns the temperature stability required for uncooled applications and to allow for device selfheating in a compact VCSEL geometry. This presents a particular problem for a VCSEL, as the lasing energy of the cavity mode has a different temperature dependence to the peak optical gain. Strategies to minimise this have involved broadening the gain spectrum by the use of non-uniform multi-quantum wells [3,4] or using the contributions of higher sub-bands [5]. However, this has the effect of reducing device efficiency by requiring non-lasing states to be pumped. The GaInNAs material system is able to provide a solution to both of these problems. Appropriate mixtures of N (<5%) and In in GaInNAs can be grown pseudomorphically on GaAs and have already demonstrated an output power of 1.43 mW at 1.26 µm under c.w. operation at room temperature [6]. There is also experimental evidence that GaInNAs has an intrinsically broad gain spectrum due the variation in local band gap arising from alternative stable lattice N sites, which originate from the various combinations of nearest neighbour Ga and In atoms in a random alloy [7]. This should lead to a wide temperature operating range for VCSEL devices.Here, we use hydrostatic pressure on working GaInNAs VCSEL devices to bring about a change in the gain peak and cavity mode alignment due to their different pressure dependencies (schematically

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“…Moreover, 850 nm VCSELs are already widely used in shorter range optical links. Several active materials, like largely studied GaInNAs [1], more recently GaInNAsSb [2] quantum wells, or strained InGaAs quantum well [3] enable 1.3 µm emission on GaAs. Recently, InAs quantum dots (QD) [4] were proved to be a competing material.…”

Section: Introductionmentioning

confidence: 99%

Gallium arsenide second‐window quantum dot VCSEL

Pougeoise

Gilet

Dunoyer

et al. 2006

Phys. Status Solidi (c)

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PACS 42.55. Px, 85.60.Jb We have processed 1.3 µm range InAs quantum dot oxide confined vertical cavity surface emitting lasers with top distributed Bragg reflectors contacts, all on GaAs substrate. Our devices exhibit acceptable parameters for 10 Gigabit Ethernet standards. 1275 nm lasing operation is achieved with low operation voltage and low threshold current. We study the threshold current variation with temperature in continuous wave and pulsed operation.

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OC-48 capable InGaAsN vertical cavity lasers

Cited by 79 publications

References 5 publications

Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 μm quantum well lasers

Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 μm quantum well lasers

Gain‐cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques

Gallium arsenide second‐window quantum dot VCSEL

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