Octave S/C-band MMIC T/R modules for multi-function phased arrays

Komiak, J.J.; Agrawal, A.K.

doi:10.1109/mcs.1991.148082

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…In this paper a J-band transceiver MMIC, which has a high level of functionality realised through the integration of a number of circuit blocks, is presented. Many previous transceiver MMICs have focused on the lower communication bands below 5 GHz [1], [2] and [3]. At higher frequencies a multi-chip module approach has been used, [4], [5].…”

Section: Introductionmentioning

confidence: 99%

A J-band Transceiver MMIC with image rejection

Zelley¹,

Gould²,

Munday³

et al. 2000

2000 30th European Microwave Conference

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-This paper describes a J-band (15 GHz) transceiver MMIC with image rejection that has been designed for RADAR T/R module applications. The MMIC consists of a switched attenuator, an LNA, a Transmit/Receive switch, an image rejection mixer and a local oscillator buffer amplifier. The size of the MMIC is 6.48 mm by 4.47 mm. In receive mode the MMIC has a conversion gain in excess of 10 dB with less than 1 dB of ripple and noise figure less than 4 dB across a 10 GHz to 16.5 GHz band. The Input P1dB is -13 dBm. In transmit mode the conversion gain is -12 dB with an input P1dB of +15 dBm. The Transceiver MMIC was fabricated using the GMMT, 0.25 µ m, H40 pHEMT process. This is believed to be the first integrated transceiver MMIC designed specifically for this frequency band.

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Section: Introductionmentioning

confidence: 99%

A J-band Transceiver MMIC with image rejection

Zelley¹,

Gould²,

Munday³

et al. 2000

2000 30th European Microwave Conference

View full text Add to dashboard Cite

show abstract

“…Consequently, the improvement of RF-performance and its tolerance of low cost chip inductors[l] and capacitors (L, C chips), and the development of assembly technologies [2]- [3] for high density mounting of miniature L, C chips and bare IC chips on glass cloth base epoxy resin laminate (glass-epoxy) substrate have been done. In this case of phase shifter, since this device has not been used in mobile terminals, it has been fabricated as MIC[4]- [5] or MMIC[6]- [7] configuration. In these cases, expensive fine process and polished dielectric or semiconductor substrates have been used to make fine pattem spiral inductors and capacitors having uniform RF characteristics.…”

Section: Introductionmentioning

confidence: 99%