Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOS

Zhang, Shifeng; Han, Yan; Ding, Ke; Hu, Jiaxian; Zhang, Bin; Zhang, Wei; Wu, Huanting

doi:10.1016/j.sse.2012.12.012

Solid-State Electronics

2013

DOI: 10.1016/j.sse.2012.12.012

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Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOS

Shifeng Zhang¹,

Yan Han²,

Ke Ding³

et al.

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Cited by 3 publications

References 8 publications

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Driving circuit with high accuracy and large driving capability for high voltage buck regulators

Lai

et al. 2014

J. Semicond.

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This paper presents a novel driving circuit for the high-side switch of high voltage buck regulators. A 40 V P-channel lateral double-diffused metal—oxide—semiconductor device whose drain—source and drain—gate can resist high voltage, but whose source—gate must be less than 5 V, is used as the high-side switch. The proposed driving circuit provides a stable and accurate 5 V driving voltage for protecting the high-side switch from breakdown and achieving low on-resistance and simple loop stability design. Furthermore, the driving circuit with excellent driving capability decreases the switching loss and dead time is also developed to reduce the shoot-through current loss. Therefore, power efficiency is greatly improved. An asynchronous buck regulator with the proposed technique has been successfully fabricated by a 0.35 μm CDMOS technology. From the results, compared with the accuracy of 16.38% of the driving voltage in conventional design, a high accuracy of 1.38% is achieved in this work. Moreover, power efficiency is up to 95% at 12 V input and 5 V output.

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Driving circuit with high accuracy and large driving capability for high voltage buck regulators

Lai

et al. 2014

J. Semicond.

View full text Add to dashboard Cite

show abstract

Reverse-Bias Stress-Induced Electrical Parameters Instability in 4H-SiC JBS Diodes Terminated Nonequidistance FLRs

Song

Yuan

Sun

et al. 2019

IEEE Trans. Electron Devices

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Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET

Yang

Tan

et al. 2023

IEEE Trans. Electron Devices

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Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOS

Cited by 3 publications

References 8 publications

Driving circuit with high accuracy and large driving capability for high voltage buck regulators

Driving circuit with high accuracy and large driving capability for high voltage buck regulators

Reverse-Bias Stress-Induced Electrical Parameters Instability in 4H-SiC JBS Diodes Terminated Nonequidistance FLRs

Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET

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