Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface

Chen, Dingbo; Wan, Li‐Jun; Li, Jie; Liu, Zhikun; Li, Guoqiang

doi:10.1016/j.sse.2018.10.012

Cited by 17 publications

(6 citation statements)

References 18 publications

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“…Consequently, this can affect the performance of GaN-based HEMTs [249]. Based on this technique, RTA at a LT of ∼600 • C was proposed to prepare ohmic contacts by reducing the Schottky barrier height between the metal and AlGaN [250]. In 2018, Li et al [250] used Al/Ti/Au stacks to achieve ohmic contacts with an R c of 1.4 Ω mm at LT (below 600 • C), with the assistance of the ICP dry etching process.…”

Section: Thermal Annealing Techniquementioning

confidence: 99%

“…Based on this technique, RTA at a LT of ∼600 • C was proposed to prepare ohmic contacts by reducing the Schottky barrier height between the metal and AlGaN [250]. In 2018, Li et al [250] used Al/Ti/Au stacks to achieve ohmic contacts with an R c of 1.4 Ω mm at LT (below 600 • C), with the assistance of the ICP dry etching process. The mechanisms responsible for this ohmic contact to the GaN-based HEMT have been studied.…”

Section: Thermal Annealing Techniquementioning

confidence: 99%

See 1 more Smart Citation

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Thermal Annealing Techniquementioning

confidence: 99%

Section: Thermal Annealing Techniquementioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…There are composition and layer parameters, including TiAlNiAu [1], TiAlW [2], TiAlTaAu [12], TiAuAlNiAu [13], TaTiAlNiAu [14], and many others. The technological processes of OC manufacturing are physical [15] and chemical treatments [16][17][18], passivations [19] and deposition methods: electronic [16][17][18], magnetron [11], thermal, annealing duration and modes [3,13,20].…”

Section: Introductionmentioning

confidence: 99%

Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

Torkhov¹,

Gradoboev²,

Orlova³

et al. 2022

Semicond. Sci. Technol.

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The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R SH , R SK , ρ and geometrical parameter L T on the LTLM test line width Wk . The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands.

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“…Currently, with the development of technology and the continuous improvement of industrial demand for power and frequency of devices, GaN devices show good characteristics and meet the requirements for power devices in all aspects. [1][2][3][4] With the increase of frequency, the monolithic microwave integrated circuit (MMIC) will become the main technology of circuit design. For MMIC, the efficiency and the accuracy of the design are mainly determined by the model.…”

Section: Introductionmentioning

confidence: 99%

Highly accurate GaN HEMT model based on the Angelov model with error compensation

Zhao

Zhang

et al. 2020

Micro & Optical Tech Letters

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With the development of the microelectronics, circuit design has become more and more important. In order to improve the accuracy of circuit design, it is necessary to improve the accuracy of the circuit model. This letter proposes an accurate method based on the Angelov model of the Gallium Nitride (GaN) high electron mobility transistors (HEMTs). For Angelov model, the fitting of DC curve is critically important. There are many parameters to fit and modify the fitting curve. Each parameter in the Angelov model has a physical meaning. Some parameters have significant influence on the fitting accuracy of the model. In this letter, the parameters sensitive to the accuracy of the model are evaluated, and formulated into a function of gate voltage and drain voltage. In order to further improve the accuracy of the model, the IV curves are compensated using the error function. A weight function is introduced to correct the error function and improve its compensation selectivity. The proposed method is an universal and effective method that significantly improves the accuracy of the Angelov model. The introduction of the error function and the weight function improve the accuracy obviously compared with the traditional Angelov model.

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Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface

Cited by 17 publications

References 18 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

Highly accurate GaN HEMT model based on the Angelov model with error compensation

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