2008
DOI: 10.1016/j.jcrysgro.2008.06.081
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On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Abstract: Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates using horizontal Hot-wall chemical vapor deposition system. Special attention was paid to the surface preparation before starting the growth. In-situ surface preparation, starting growth parameters and growth temperature are found to play a vital role to maintain the polytype stability in the epilayer. High quality epilayers with 100% 4H-SiC were obtained on full 2″substrates. Different optical and structural techniques were… Show more

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Cited by 66 publications
(90 citation statements)
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“…In this study we have used our unique growth process developed for on-axis homoepitaxy, which allows us to obtain pure 4H polytype in the epilayer without inclusions of foreign polytypes [24].…”
Section: Homoepitaxial Growth Of 4h-sicmentioning
confidence: 99%
“…In this study we have used our unique growth process developed for on-axis homoepitaxy, which allows us to obtain pure 4H polytype in the epilayer without inclusions of foreign polytypes [24].…”
Section: Homoepitaxial Growth Of 4h-sicmentioning
confidence: 99%
“…We could speculate that carbon species adhere better on a flat surface (that is the case of on-axis substrates) than on a stepped surface (off-axis substrates) where they might have a faster desorption rate. Etching experiments showed that the more favourable etching conditions depend on the substrate offangle: Si-rich etching for on-axis substrates [7,10], pure Hydrogen etching for 41 off-axis 4H substrates [27] and C-rich etching for 81 off-axis 4H substrates [18]. Good etching conditions are achieved when the etching is performed with a gas composition, which suppress the removal of the fastest desorbing specie, this allows us to state that at higher off-angle carbon atoms are desorbing faster than silicon atoms, which is in agreement with what was speculated above.…”
Section: C-sic Formationmentioning
confidence: 99%
“…On-axis substrates were originally used [2][3][4], but much higher temperatures (more than 1800 1C) were needed and the grown material was of lower crystalline quality. Bipolar devices are affected by the presence of basal plane dislocations (BPD) in the epitaxial layer, which cause a drift of the forward voltage during operation [5,6], however, their propagation in the epitaxial layer can be avoided if the epitaxial growth is done on on-axis substrates [7,8]. It has also been demonstrated by kinetic Monte-Carlo simulations that point defects decrease by growing on low off-angle substrates (less than 21 off), which confirms that epitaxial layers grown on on-axis substrates can definitively have a superior crystalline quality [9].…”
Section: Introductionmentioning
confidence: 99%
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“…The reduction of BPD density is observed by decreasing the substrate off-cut angle. [9][10][11] A drastic reduction of the BPD density has been observed on epilayers grown on 4…”
Section: Introductionmentioning
confidence: 98%