On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H<sub>2</sub> etching process

Kim, Hyun Woo; Lee, Hunhee; Kim, Young Seok; Lee, Suhyeong; Kang, Hongjeon; Heo, Jaeyeong; Kim, Hyeong Joon

doi:10.1039/c7ce00479f

Cited by 5 publications

(4 citation statements)

References 37 publications

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“…However, at larger C/Si ratios, although the rms value of the buffer layer surface is reduced and a flatter surface is obtained, it may also adversely affect the doping uniformity. In addition, the introduction of H 2 etching can effectively avoid the interference of the substrate surface quality on the experimental results and help to further reduce the rms value of the buffer layer surface [ 25 ].…”

Section: Resultsmentioning

confidence: 99%

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Yang,

Guo,

Zhao

et al. 2024

Materials

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In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H2 etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer’s C/Si ratio and growth pressure significantly influence the overall quality of the epitaxial wafer. Specifically, an optimal C/Si ratio of 0.5 and a growth pressure of 70 Torr yield higher-quality epitaxial layers. Additionally, the pre-carbonization time and H2 etching time primarily affect the uniformity and surface quality of the epitaxial wafer, with a pre-carbonization time of 3 s and an H2 etching time of 3 min found to enhance the surface quality of the epitaxial layer.

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Section: Resultsmentioning

confidence: 99%

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Yang,

Guo,

Zhao

et al. 2024

Materials

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“…Since the relevant flow test work has not been performed, Figure 2 shows the feasibility manufacturing process of H-IGBT. A p-poly layer, a p-SiC layer, a Ndrift layer, a CSL layer, a p-body layer, and so on are sequentially grown on the N + substrate [19,20], as shown in Figure 2a. Then, dry etching [21,22] is used to form gate trench regions, as shown in Figure 2b.…”

Section: Proposed Fabrication Proceduresmentioning

confidence: 99%

Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

Mao

Wang

Wu³

et al. 2019

Micromachines

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In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. By adjusting the doping concentration on both sides of the heterojunction, the turn-off loss is further reduced without sacrificing other characteristics of the device. The electrical characteristics of the device were simulated through the Silvaco ATLAS 2D simulation tool and compared with the traditional structure to verify the design idea. The simulation results show that, compared with the traditional structure, the turn-off loss of the proposed structure was reduced by 58.4%, the breakdown voltage increased by 13.3%, and the forward characteristics sacrificed 8.3%.

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“…For on-axis homoepitaxial growth, one of the major challenges has been to control the spontaneous formation of 3C-SiC inclusions on the Si-face of 4H-SiC substrates. − It has been shown that 100% 4H polytype can be obtained in epilayers grown on the Si-face of 2-in. diameter wafers through controlling the substrate’s surface etching and early stage of the growth .…”

Section: Introductionmentioning

confidence: 99%

Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations

Ul-Hassan

Karhu

Lilja

et al. 2019

Crystal Growth & Design

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On-axis homoepitaxy of 4H-SiC has the advantage of producing epilayers that are free of basal plane dislocations. Such layers can be highly beneficial for SiC-based high-power bipolar electronic devices which otherwise suffer from bipolar degradation phenomena related to basal plane dislocations in epilayers. In this study, we have developed on-axis homoepitaxy on the Si-face of 100 mm diameter 4H-SiC wafers with only 4H polytype in the epilayer excluding the edges of the wafer. We have also compared standard and chloride-based growth, the influence of different ambient conditions on surface preparation of the substrate, the influence of the histories of different growth cells, and the geometry of the susceptors regarding 4H-polytype stability in the epilayer. Substrate surface preparation, growth temperature, C/Si ratio, and Si/H ratio are found to be the most influential parameters to achieve homoepitaxy. On-axis homoepitaxial growth rate is limited to a very low value of <10 μm/h. We have performed a systematic study to understand the influence of different growth parameters and gas phase chemistries to determine whether on-axis growth rate can be enhanced and, if not, what the limiting factors are. Our experimental evidence suggests that the on-axis growth rate is not limited by the gas phase chemistry or diffusion, but it is limited by the surface kinetics. A significantly low step density on on-axis substrates lowers the surface reaction rates and limits the growth rate to lower values. It may not be possible to further improve the growth rate even with chloride-based growth using epitaxial growth conditions.

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On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H₂ etching process

Cited by 5 publications

References 37 publications

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations

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On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H2 etching process

Cited by 5 publications

References 37 publications

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations

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On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H₂ etching process