On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour

Abstract

Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts, which exhibit process-programmable functionality switching between photomultiplication and memristive behaviour. The local electric field at the interface between the polymer bottom electrode and the enclosed molecular channels modulates the ionic-electronic charge interaction and hence determines the transition of the device function. When ions are not driven into the molecular channels at a low interface electric field, photogenerated holes are trapped as electronic space charges, resulting in photomultiplication with a high external quantum efficiency. Once mobile ions are polarized and accumulated as ionic space charges in the molecular channels at a high interface electric field, the molecular devices show ferroelectric-like memristive switching with remarkable resistive ON/OFF and rectification ratios.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

“…After that, Li et al further developed fully integrated process-programmable molecular devices by using a polymeric bottom electrode as the "ion reservoir" and rolled-up metallic nanomembranes as the "soft contact." [300] As demonstrated in Figure 14H [281] Copyright 2010, American Chemical Society. B) Schematic and SEM image of outer rolled-up soft contact.…”

Advances in Organ-on-a-Chip Materials and Devices

“…Design and microfabrication of the molecular devices. [Reproduced with permission from ref . Copyright 2022, Nature Publications.)…”

Two-photon nanolithography of positive photoresist of AZ 5214E with a spatial resolution at nanoscale

“…The AZ 5214E photoresist has been applied in the fabrication of micropattern of quantum dots, 14 chromium photomasks, 15 ultrabroadband infrared light absorber, 16 magnetoresistive sensing element, 17 needle-shaped ultrathin piezoelectric microsystem, 18 electronic skin 19 and integrated molecular devices. 20 UV optical lithography [14][15][16][17]19 is often adopted for lithography of AZ 5214E photoresist, but the fabricated structures depend on the prefabricated photomasks, which can not only increase the cost but also limit the flexibility for the fabrication of diverse micro/nanostructures. Skriniarova et al have reported the maskless lithography of AZ 5214E photoresist by using the laser interference, e-beam direct write lithography and near-field scanning optical microscopy lithography.…”

“…It can be used as a positive photoresist, and can also be reversed as a negative photoresist through the additional reversal bake and flood exposure. The AZ 5214E photoresist has been applied in the fabrication of micropattern of quantum dots, 14 chromium photomasks, 15 ultrabroadband infrared light absorber, 16 magnetoresistive sensing element, 17 needle-shaped ultrathin piezoelectric microsystem, 18 electronic skin 19 and integrated molecular devices 20 …”