On-chip interconnect trends, challenges and solutions: How to keep RC and reliability under control

Tőkei, Zs.; Ciofi, Ivan; Roussel, Ph.; Debacker, Peter; Raghavan, Praveen; Veen, Marleen H. van der; Jourdan, N.; Wilson, Chris; Gonzalez, V. Vega; Adelmann, Christoph; Wen, Lianggong; Croes, Kristof; Moors, Kristof; Krishtab, Mikhail; Armini, Silvia; Bömmels, J.

doi:10.1109/vlsit.2016.7573426

Cited by 15 publications

(11 citation statements)

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“… 27 − 31 Currently, Co mostly receives much attention for applications in interconnect technology, in order to reduce the resistance–capacitance delay in state-of-the-art devices. 32 First, Co has been suggested as a viable candidate as the liner for Cu interconnects because Co can be thinner than the conventional Ta liner, which leaves more space for Cu. 33 , 34 Moreover, Co is also being investigated for the replacement of Cu or W in small-dimension interconnects in the front-end of line.…”

Section: Introductionmentioning

confidence: 99%

“…Co is a ferromagnetic transition metal used in, for instance, magnetoresistive random-access memory and CoSi 2 contacts. − Currently, Co mostly receives much attention for applications in interconnect technology, in order to reduce the resistance–capacitance delay in state-of-the-art devices . First, Co has been suggested as a viable candidate as the liner for Cu interconnects because Co can be thinner than the conventional Ta liner, which leaves more space for Cu. , Moreover, Co is also being investigated for the replacement of Cu or W in small-dimension interconnects in the front-end of line. , It is therefore valuable to select Co ALD as a model system for studying the influence of the co-reactant.…”

Section: Introductionmentioning

confidence: 99%

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Atomic Layer Deposition of Cobalt Using H₂-, N₂-, and NH₃-Based Plasmas: On the Role of the Co-reactant

et al. 2018

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This work investigates the role of the co-reactant for the atomic layer deposition of cobalt (Co) films using cobaltocene (CoCp2) as the precursor. Three different processes were compared: an AB process using NH3 plasma, an AB process using H2/N2 plasma, and an ABC process using subsequent N2 and H2 plasmas. A connection was made between the plasma composition and film properties, thereby gaining an understanding of the role of the various plasma species. For NH3 plasma, H2 and N2 were identified as the main species apart from the expected NH3, whereas for the H2/N2 plasma, NH3 was detected. Moreover, HCp was observed as a reaction product in the precursor and co-reactant subcycles. Both AB processes showed self-limiting half-reactions and yielded similar material properties, that is, high purity and low resistivity. For the AB process with H2/N2, the resistivity and impurity content depended on the H2/N2 mixing ratio, which was linked to the production of NH3 molecules and related radicals. The ABC process resulted in high-resistivity and low-purity films, attributed to the lack of NHx,x≤3 species during the co-reactant exposures. The obtained insights are summarized in a reaction scheme where CoCp2 chemisorbs in the precursor subcycle and NHx species eliminate the remaining Cp in the consecutive subcycle.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Cobalt Using H₂-, N₂-, and NH₃-Based Plasmas: On the Role of the Co-reactant

et al. 2018

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“…Moreover, lowconductivity barrier and liner layers, required to ensure interconnect reliability, occupy an increasing wire volume fraction, increasing the overall line resistance further. Therefore, the interconnect performance has become a key constraint for the overall circuit performance, limiting further progress in circuit miniaturization [2,10,11]. To mitigate this effect, alternatives to Cu as conductor materials have been researched with increasing intensity for several years [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the interconnect performance has become a key constraint for the overall circuit performance, limiting further progress in circuit miniaturization [2,10,11]. To mitigate this effect, alternatives to Cu as conductor materials have been researched with increasing intensity for several years [11][12][13][14]. Ideal alternative metals show a much weaker thickness dependence of the resistivity than Cu and allow for reliable operation without the need for barrier and liner layers.…”

Section: Introductionmentioning

confidence: 99%

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Adelmann

2019

Solid-State Electronics

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Several issues concerning the applicability of the temperature coefficient of the resistivity (TCR) method to scaled interconnect lines are discussed. The central approximation of the TCR method, i.e. the substitution of the interconnect wire TCR by the bulk TCR becomes doubtful when the resistivity of the conductor metal is strongly increased by finite size effects. Semiclassical calculations for thin films show that the TCR deviates from bulk values when the surface roughness scattering contribution to the total resistivity becomes significant with respect to grain boundary scattering, an effect that might become even more important in nanowires due to their larger surface-to-volume ration. In addition, the TCR method is redeveloped to account for line width roughness. It is shown that for rough wires, the TCR method yields the harmonic average of the cross-sectional area as well as, to first order, the accurate value of the resistivity at the extracted area. Finally, the effect of a conductive barrier or liner layer on the TCR method is discussed. It is shown that the liner or barrier parallel conductance can only be neglected when it is lower than about 5 to 10% of the total conductance. It is furthermore shown that neglecting the liner/barrier parallel conductance leads mainly to an overestimation of the cross-sectional area of the center conductor whereas its resistivity is less affected.

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“…27,28 Area-selective ALD of Ru is relevant for industrial applications, since Ru is investigated for use in metal interconnects, either as a diffusion barrier for Cu (which demonstrates a low solubility in Ru), or as the conducting wire material itself. [29][30][31][32][33][34] Ru also has applications as an electrode in dynamic random access memory (DRAM), gate metal in transistors, and seed layer for electroplating. [35][36][37][38][39][40] Although area-selective ALD is in an early stage of development, there are several reports on area-selective ALD of Ru.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

Vos

Chopra

Ekerdt

et al. 2021

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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On-chip interconnect trends, challenges and solutions: How to keep RC and reliability under control

Cited by 15 publications

References 1 publication

Atomic Layer Deposition of Cobalt Using H₂-, N₂-, and NH₃-Based Plasmas: On the Role of the Co-reactant

Atomic Layer Deposition of Cobalt Using H₂-, N₂-, and NH₃-Based Plasmas: On the Role of the Co-reactant

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

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On-chip interconnect trends, challenges and solutions: How to keep RC and reliability under control

Cited by 15 publications

References 1 publication

Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant

Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

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Product

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Atomic Layer Deposition of Cobalt Using H₂-, N₂-, and NH₃-Based Plasmas: On the Role of the Co-reactant

Atomic Layer Deposition of Cobalt Using H₂-, N₂-, and NH₃-Based Plasmas: On the Role of the Co-reactant