2017
DOI: 10.1109/lpt.2017.2682560
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On-Chip Investigation of Phase Noise in Monolithically Integrated Gain-Switched Lasers

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Cited by 6 publications
(4 citation statements)
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References 11 publications
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“…In each of these cases, both coupled lasers were biased above threshold current, therefore operating in a mutually coupled system. Further experimental analysis into the benefits of the on-chip coupling of gain-switched lasers, particularly in relation to the laser's linewidth and phase noise, were investigated in [5] and [12] respectively. These examples use a similar fabrication material, process and design as the example described in this paper, and so their results are assumed to be equivalent to the linewidth and phase noise of the device in this work.…”
Section: Introductionmentioning
confidence: 99%
“…In each of these cases, both coupled lasers were biased above threshold current, therefore operating in a mutually coupled system. Further experimental analysis into the benefits of the on-chip coupling of gain-switched lasers, particularly in relation to the laser's linewidth and phase noise, were investigated in [5] and [12] respectively. These examples use a similar fabrication material, process and design as the example described in this paper, and so their results are assumed to be equivalent to the linewidth and phase noise of the device in this work.…”
Section: Introductionmentioning
confidence: 99%
“…In Reference 21 the authors gain switch two types of integrated two‐section lasers to generate OFCs with a free spectral range (FSR) that can be tuned from 5 to 15 GHz. In Reference 22, the authors demonstrate that the phase noise of on‐chip monolithically integrated devices increases with gain‐switching without applying OIL, and decreases under the influence of OIL from a purer master laser. However, such PICs require sophisticated and complex regrowth steps that reduce the yield and increase the cost of fabrication.…”
Section: Introductionmentioning
confidence: 99%
“…The repetition rate of frequency combs from integrated sources can be reduced by pulse-picking [52] or by sideband generation using single-frequency lasers and electro-optic modulation [53] or gain-switching [54,55]. However, these methods provide only low power efficiency (in case of pulse-picking), fundamentally broader linewidths of the comb lines (cascaded electro-optic modulation), or jitter (gain-switching).…”
Section: Exploring Diode Laser Mode-locking Toward Low Repetition Ratesmentioning
confidence: 99%
“…A disadvantage of this method is that the linewidth of the m-th order sideband is m times higher than the linewidth of the modulation frequency [179]. There are also reports of comb generation via gain-switching at 6 GHz [54] and 5 GHz [55], however, this approach suffers from timing jitter [177].…”
Section: The Problem Of High Loss In Diode Lasersmentioning
confidence: 99%