On-chip terahertz modulation and emission with integrated graphene junctions

Island, Joshua O.; Kissin, Peter; Schalch, Jacob; Cui, Xiaomeng; Haque, Sheikh Rubaiat Ul; Potts, A; Taniguchi, Takashi; Averitt, R. D.; Young, Andrea

doi:10.1063/5.0005870

Cited by 14 publications

(7 citation statements)

References 40 publications

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“…The flexible PET/STE can therefore be used as the building blocks for enhancing and manipulating THz radiation, and can be assembled to the ready-to-use device for compact THz spectroscopic application. [66][67][68]…”

Section: Discussionmentioning

confidence: 99%

Cascaded Amplification and Manipulation of Terahertz Emission by Flexible Spintronic Heterostructures

Jin

Peng

et al. 2022

Laser & Photonics Reviews

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Spintronic heterostructures consisting of ferromagnetic (FM) and nonmagnetic (NM) have become increasingly important devices for terahertz (THz) pulse generation, named as spintronic THz emitter (STE). The recycling of the laser pump energy is known to have a key impact on further improvement of the THz emission. Here, an efficient and practical approach to enhance and manipulate THz generation based on a cascaded Pt/CoFe/Ta trilayer fabricated on a flexible polyethylene terephthalate (PET) substrate is shown. Considering the refractive index n of PET is ≈1.61 at 1.55 eV and ≈1.75 at THz frequencies, it is anticipated that the femtosecond (fs) laser pulse propagates with a similar group velocity as the generated THz pulse. Therefore, the cascaded design enables all THz emission from each PET/STE propagating almost in‐phase and yields a 1.55 times amplification compared to a single PET/STE. Two proof‐of‐concept demonstrations are experimentally presented. First one, a metasurface can be assembled with the cascaded PET/STE to manipulate the THz signal. Second one, the cascaded PET/STE is used to perform a spectroscopic measurement of riboflavin. These demonstrations highlight the potential of flexible PET/STE for building blocks of advanced functionalities, such as compact THz emitters, THz spectroscopic, and imaging systems.

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Section: Discussionmentioning

confidence: 99%

Cascaded Amplification and Manipulation of Terahertz Emission by Flexible Spintronic Heterostructures

Jin

Peng

et al. 2022

Laser & Photonics Reviews

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“…9,10 Due to the increased degree of integration of the THz applications, miniaturizing the complex THz system into a compact unit is highly desirable. 11,12 Currently, more and more theoretical and experimental studies show that ultrafast spintronics is closely associated with THz photonics. 13 On one hand, THz pulses provide powerful tools for studying ultrafast spintronics, enabling THz-driven spin waves, probing spin transport, and ultrafast magnetometry.…”

Section: Introductionmentioning

confidence: 99%

“…They have good temporal and spatial coherence, low photon energy, high transmission capacity, and strong penetration, making them important in various fields such as THz imaging, nondestructive inspection, and high-speed THz communication . For a typical THz application system, quite complex THz optoelectronic devices are required, which includes the effective THz emitters and/or sources, , THz modulators, , and THz detectors. , Due to the increased degree of integration of the THz applications, miniaturizing the complex THz system into a compact unit is highly desirable. , …”

Section: Introductionmentioning

confidence: 99%

Multifield-Modulated Spintronic Terahertz Emitter Based on a Vanadium Dioxide Phase Transition

Zhou,

Li,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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The efficient generation and active modulation of terahertz (THz) waves are strongly required for the development of various THz applications such as THz imaging/spectroscopy and THz communication. In addition, due to the increasing degree of integration for the THz optoelectronic devices, miniaturizing the complex THz system into a compact unit is also important and necessary. Today, integrating the THz source with the modulator to develop a powerful, easy-to-adjust, and scalable or on-chip THz emitter is still a challenge. As a new type of THz emitter, a spintronic THz emitter has attracted a great deal of attention due to its advantages of high efficiency, ultrawide band, low cost, and easy integration. In this study, we have proposed a multifield-modulated spintronic THz emitter based on the VO2/Ni/Pt multilayer film structure with a wide band region of 0–3 THz. Because of the pronounced phase transition of the integrated VO2 layer, the fabricated THz emitter can be efficiently modulated via thermal or electric stimuli with a modulation depth of about one order of magnitude; the modulation depths under thermal stimulation and electrical stimulation were 91.8% and 97.3%, respectively. It is believed that this multifield modulated spintronic THz emitter will provide various possibilities for the integration of next-generation on-chip THz sources and THz modulators.

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“…Early on-chip THz experiments incorporated photoconductive (PC) switches into transmission line circuits to emit and detect THz radiation. − Recent on-chip THz efforts − have explored new geometries, leading to increases in the THz amplitude and spectral bandwidth. On-chip THz TDS has been recently used to study electronic phases at cryogenic temperatures in carbon nanotubes, topological insulators, and two-dimensional electronic systems such as GaAs and graphene. − Most of the existing designs for on-chip THz spectroscopy require monolithic fabrication of the THz emitter/receiver and the vdW device. The combined complexity of fabricating both the THz spectrometer and a vdW device to perform a single experiment, however, reduces measurement throughput.…”

mentioning

confidence: 99%

On-Chip Time-Domain Terahertz Spectroscopy of Superconducting Films below the Diffraction Limit

et al. 2023

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Free-space time domain THz spectroscopy accesses electrodynamic responses in a frequency regime ideally matched to interacting condensed matter systems. However, THz spectroscopy is challenging when samples are physically smaller than the diffraction limit of ∼0.5 mm, as is typical, for example, in van der Waals materials and heterostructures. Here, we present an on-chip, time-domain THz spectrometer based on semiconducting photoconductive switches with a bandwidth of 200 to 750 GHz. We measure the optical conductivity of a 7.5-μm wide NbN film across the superconducting transition, demonstrating spectroscopic signatures of the superconducting gap in a sample smaller than 2% of the Rayleigh diffraction limit. Our spectrometer features an interchangeable sample architecture, making it ideal for probing superconductivity, magnetism, and charge order in strongly correlated van der Waals materials.

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On-chip terahertz modulation and emission with integrated graphene junctions

Cited by 14 publications

References 40 publications

Cascaded Amplification and Manipulation of Terahertz Emission by Flexible Spintronic Heterostructures

Cascaded Amplification and Manipulation of Terahertz Emission by Flexible Spintronic Heterostructures

Multifield-Modulated Spintronic Terahertz Emitter Based on a Vanadium Dioxide Phase Transition

On-Chip Time-Domain Terahertz Spectroscopy of Superconducting Films below the Diffraction Limit

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