ON current improvement techniques for double gate-tunnel field effect transistor

Kumar, Satyam; Khanna, Gargi

doi:10.1109/ispcc.2017.8269710

Cited by 3 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The effect of body/channel thickness is also important and it has been demonstrated in [42,43]. Figure 18 demonstrates the effect of body thickness on the transfer characteristics for the P 2 and P 3 doping of 4 × 10 19 cm −3 at a constant thickness of 2 nm in the TP-TFET.…”

Section: Resultsmentioning

confidence: 89%

Design of a triple pocket multi-gate material TFET structure for low-power applications

Ahmad¹,

Alam²

2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper we propose a triple-pocket multi-gate material TFET (TP-TFET) device structure for a low-power and high-performance circuit design. The proposed device structure integrates the good features of both the conventional MOSFET and tunnel FET. This is achieved through three doped pockets and dual work-function gate material on near the source–channel junction. In the proposed device, the ON state conduction mechanism is dominated by an over-the-barrier thermal diffusion of carriers, thereby offering a high-value drive current. On the other hand, the subthreshold conduction mechanism is dominated by the tunnelling of carriers, thereby incurring a very small leakage current and offering a small subthreshold slope. We use 2D TCAD device simulations for the analysis of the TP-TFET and its comparison with the existing pocketed-heterogate TFET (PHG-TFET). We observe that the proposed TFET offers the average subthreshold slope (SSavg) of 2.85 mV dec−1 and ON current of ∼230 µA µm−1 as compared to the existing PHG-TFET, which offers SSavg of 44.91 mV dec−1 and I ON = ∼62 µA µm−1. Further, some benchmark circuits are implemented using these devices. A ring oscillator designed using the TP-TFET shows approximately a 6× higher frequency as compared to that designed using the PHG-TFET. The power delay product of the NAND gate and NOR gate obtained using these devices differ by approximately 3× to 20× as the supply voltage is decreased from 1.0 to 0.5 V.

show abstract

Section: Resultsmentioning

confidence: 89%

Design of a triple pocket multi-gate material TFET structure for low-power applications

Ahmad¹,

Alam²

2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

To Analyze Energy Band Diagram of N-Tunnel Field Effect Transistors (NTFET)

Bhatia

Gill

2021

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

In low power consumption devices an emerging device of transistor is Tunnel Field Effect Transistors (TFET).Although MOSFET (Metal Oxide Field Effect Transistors) having applications based on low energy usable electronics devices the power is reduced by reducing supply voltage but by decreasing supply voltage slow down the sub threshold swing. By the down scaling of MOSFET static power become high. As TFET having structure closer to MOSFET and working of TFET is based on p-i-n diode in which tunnel current flows between the source and channel bands. The low value of leakage current and sub threshold swing in TFET is used for low power applications as the switching in TFET is on the principle of modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in MOSFET. The analysis on Energy band diagram of NTFET discussed in this paper.

show abstract

Performance Analysis on Effect of Variation in Oxide Material of Double Gate Tunnel Field Effect Transistor

Bhatia

Gill

2021

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

In this paper structure of Double Gate Tunnel Field Effect Transistor work to increase the efficiency of the device performance of Tunnel Field Effect Transistors making it one of the potential candidates for small scale devices. The essential point of this research work is to consider the performance analysis of the structure. This work is accomplished with the assistance of tool Cogenda TCAD version 1.9.2. The designing of the device, simulation and correlation of results have been gotten on this tool. The section gives the stream of Research Methodology and clarifies the footsteps for Design and Simulation of Double Gate Tunnel Field Effect Transistor.

show abstract

ON current improvement techniques for double gate-tunnel field effect transistor

Cited by 3 publications

References 13 publications

Design of a triple pocket multi-gate material TFET structure for low-power applications

Design of a triple pocket multi-gate material TFET structure for low-power applications

To Analyze Energy Band Diagram of N-Tunnel Field Effect Transistors (NTFET)

Performance Analysis on Effect of Variation in Oxide Material of Double Gate Tunnel Field Effect Transistor

Contact Info

Product

Resources

About