On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor (<inline-formula> <tex-math notation="LaTeX">${\pi }$ </tex-math></inline-formula>-FET)

Abstract

This paper describes the potential of tunable strain in field-effect transistors to boost performance of digital logic. Voltage-controlled strain can be imposed on a semiconductor body by the integration of a piezoelectric material improving transistor performance. In this paper, we derive the relations governing the subthreshold swing in such devices to improve the understanding. Using these relations and considering the mechanical and technological boundary conditions, we discuss possible device architectures that employ this principle. Further, we review the recently published experimental and modeling results of this device, and give analytical estimates of the power consumption.

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

“…Considering the material composition of most organic semiconductors, controlling the temperature rise within a reasonable range is important to avoid the unwanted degradation of organic materials and therefore maintain stable device operation. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. To avoid externally wiring the batteries, flexible OFET-based circuits can be expected to be self-powered by integrating them with organic solar cells, thermoelectric modules, or triboelectric nanogenerators.…”

“…Rapid progress has been made in this field, and research efforts have focused on reducing the operating voltage of OFETs, [31][32][33] enhancing the switching efficiency of transistors, [34][35][36][37] and demonstrating several novel device concepts for low-power applications. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored.…”

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

“…For the -FET, it was estimated [ 42 ] that, depending on the device dimensions, the can drop by a factor of two in the silicon (Si) -FinFET compared to a conventional FinFET. On the other hand, for the former mechanical power is needed during switching resulting in an increased , more or less within the same range.…”

“…In our theoretical and numerical work [ 16 , 42 ], we have predicted that there are experimental challenges to reduce the effectively: (1) ultrathin and relatively stiff interfacial layers in between the -layer and semiconductor body are required, all with proper (rigid) mechanical boundary conditions, (2) the semiconductor body should preferably have a low stiffness and a high “effective” deformation potential, and (3) the -material should have a high -response and a high electrical breakdown field.…”

“…Later, other theoretical works [ 47 ] reported lower values for both Si and Ge FinFETs (∼40 mV/dec) possibly because of the use of a thin -layer (3 nm) hence operating voltage (0.5 V). Typically, for n-type FETs, lower values are obtained which can be explained by the higher deformation potential in the conduction band than that in the valence band [ 42 ]. Moreover, Ge is the most attractive material because it has a lower Young’s modulus and higher deformation potentials compared to the other bulk materials.…”