2018
DOI: 10.3390/mi9110582
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The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

Abstract: For some years now, the ever continuing dimensional scaling has no longer been considered to be sufficient for the realization of advanced CMOS devices. Alternative approaches, such as employing new materials and introducing new device architectures, appear to be the way to go forward. A currently hot approach is to employ ferroelectric materials for obtaining a positive feedback in the gate control of a switch. This work elaborates on two device architectures based on this approach: the negative-capacitance a… Show more

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Cited by 4 publications
(3 citation statements)
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“…The conventional metal oxide semiconductor (MOSFET) has a subthreshold swing limit of 60 mV/dec at room temperature, which limits the application of MOSFET devices in ultra-low power integrated circuits (ICs) [1,2]. In this context, the tunneling field effect transistor (TFET), which can break through the 60 mV/dec sub-threshold swing limit, is a competitive candidate to replace MOSFET in low power ICs [3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…The conventional metal oxide semiconductor (MOSFET) has a subthreshold swing limit of 60 mV/dec at room temperature, which limits the application of MOSFET devices in ultra-low power integrated circuits (ICs) [1,2]. In this context, the tunneling field effect transistor (TFET), which can break through the 60 mV/dec sub-threshold swing limit, is a competitive candidate to replace MOSFET in low power ICs [3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…A traditional metal-oxide-semiconductor field-effect transistor (MOSFET) has a 60 mV/dec subthreshold swing at room temperature, which limits the application of this device in ultra-low power integrated circuits (ICs) [1,2]. The tunnel field-effect transistor (TFET) is a promising candidate for replacing the conventional MOSFET in low power ICs [3,4,5].…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, Hueting [4], who analyzed current research into ferroelectric transistors. This research field looks at employing ferroelectric materials to obtain positive feedback in the gate control of a switch.…”
mentioning
confidence: 99%