On Enhanced Miller Capacitance Effect in Interband Tunnel Transistors

Mookerjea, S.; Krishnan, R.; Datta, Suman; Narayanan, V.

doi:10.1109/led.2009.2028907

Cited by 205 publications

(95 citation statements)

References 10 publications

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“…The entire gate capacitance to fall upon the drain terminal (C GD % C GG ) in contrast to a MOSFET, where the total gate capacitance is known to be symmetrically distributed among the source and the drain terminal [51]. As a result of this enhanced Miller capacitance effect, a voltage spike or large overshoot appears on the transient plots of the TFET based inverters [34,55,56]. Careful observation of the inset of Fig.…”

Section: Resultsmentioning

confidence: 99%

“…So far, TFETs are extensively investigated for low-power digital logic applications with very little attention given to analog/RF performance. Until now, there has been only a few studies [34][35][36] containing the analysis of the usage of TFETs for high frequency analog/mixed-signal applications. High gate-to-drain capacitance C GD and low value of transconductance are identified as the major area of concerns and challenges for use of TFETs in high frequency analog/RF applications.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

Chakraborty¹,

Sarkar

2015

Superlattices and Microstructures

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

Chakraborty¹,

Sarkar

2015

Superlattices and Microstructures

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“…In [13], the authors have shown that in comparison with Sibased TFETs, the design of TFETs with III-V materials (low bandgap and low mass ) can mitigate the Miller capacitance effect due to the reduced density of states (DOS) of such materials. Therefore, TFETs designed with III-V materials are advantageous in comparison with Silicon devices for ultra-low power applications focused on energy-harvesting.…”

Section: Tunnel Fet Intrinsic Capacitancementioning

confidence: 99%

“…4 (a), the total gate capacitance of the heterojunction TFET is dominated by CGD. As the TFET current is dependent on the barrier shrinking in the sourcechannel interface, the resulting CGS is shown much lower than CGD when the transistor is active [13,14] The lower gate-capacitance of TFETs in comparison with Si MOSFETs can reduce the dynamic power consumption and delays of digital circuits as shown in [15]. In digital logic, the uni-directional conduction of TFET devices and the enhanced Miller capacitance can result in bootstrapped nodes within the circuit, causing potential failures and reliability risks [15,16].…”

mentioning

confidence: 99%

“…This characteristic can result in switching nodes with transient "spikes", with voltage values above the power supply voltage and below ground. For TFET-based charge-pumps and rectifier, this behavior can induce an increased switching power as referred in [11].In [13], the authors have shown that in comparison with Sibased TFETs, the design of TFETs with III-V materials (low bandgap and low mass ) can mitigate the Miller capacitance effect due to the reduced density of states (DOS) of such materials. Therefore, TFETs designed with III-V materials are advantageous in comparison with Silicon devices for ultra-low power applications focused on energy-harvesting.…”

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confidence: 99%

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Insights Into Tunnel FET-Based Charge Pumps and Rectifiers for Energy Harvesting Applications

Cavalheiro

Moll

Valtchev

2017

IEEE Trans. VLSI Syst.

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Abstract-In this work the electrical characteristics of Tunnel FET (TFET) devices are explored for energy harvesting frontend circuits with ultra-low power consumption. Compared to conventional thermionic technologies the improved electrical characteristics of TFET devices are expected to increase the power conversion efficiency (PCE) of front-end charge-pumps and rectifiers powered at sub-μW power levels. Under reverse bias conditions the TFET device presents particular electrical characteristics due to the different carrier injection mechanism. A negative differential resistance (NDR) is observed at low reverse bias and high drift diffusion (DD) current is observed at high reverse bias, thus degrading the efficiency of low-power front-end circuits and limiting their operation range. Therefore, in order to take full advantage of the TFET electrical characteristics in front-end energy harvesting circuits, different circuit approaches are required. In this work we propose and discuss different topologies for TFET-based charge-pumps and rectifiers for energy harvesting applications.Index Terms-Charge-Pump, Energy Harvesting, Passive Rectifier, Thermogenerator, Tunnel FET, Ultra-Low Power. I. INTRODUCTIONHE emerging Tunnel Field-Effect Transistor (TFET) has been considered an attractive alternative to replace conventional CMOS technologies in ultra-low power and energy efficient computing applications [1][2][3][4][5][6][7]. In contrast to thermionic devices, the high energy filtering of the band -toband tunneling (BTBT) carrier injection mechanism characterizes the TFET device with a sub-threshold slope (SS) below 60 mV/dec (at room temperature) and lower leakage current.Simulation results show that TFET devices present better electrical characteristics than conventional technologies at sub-0.25 V operation [8]. On the other hand, TFETs conduct less current at voltages around 1 V, and thereby their use is envisioned for low voltage, low performance applications.T his paragraph of the first footnote will contain the date on which you submitted your paper for review. This work was supported by the Portuguese funding institution FCT (Fundação para a Ciência e a T ecnologia) and Spanish Ministry of Economy (MINECO) and ERDF funds through project T EC2013-45638-C3-2-R (Maragda).D. Cavalheiro and F. Moll are with the Department of Electronic Engineering, Polytechnic University of Catalonia, Jordi Girona, 31, 08034, Barcelona, francesc.moll@upc.edu).S. Valtchev is with the Department of Electrical Engineering, New University of Lisbon FCT , Quinta da T orre, 2829-516 Caparica, Portugal (e-mail: ssv@fct.unl.pt).As energy harvesting transducers produce low output voltage values from typical ambient conditions with small temperature gradients (case of thermogenerators) and low RF power (antennas powered by electromagnetic radiation), energy conversion circuits are required to increase these values for use by the electronic systems . Under extreme low voltage scenarios, TFETs appear as an interesting device to implement the...

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The Tunnel Field‐Effect Transistor

Verreck

Groeseneken

Verhulst³

2016

Wiley Encyclopedia of Electrical and Electronics Engineering

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Scaling of metal‐oxide‐semiconductor field‐effect transistors (MOSFET) is hitting fundamental limits due to power issues. In this article, an alternative transistor concept, the tunnel FET (TFET), is discussed, which employs quantum mechanical band‐to‐band tunneling to reduce power consumption. The main operating principle is explained, followed by a discussion of different modeling approaches. Next, the main performance challenges are presented. Different options to overcome these challenges are discussed. These options include a different material choice and alternative implementations, including dopant pockets, improved gate configurations, and strain. Specific considerations for using TFET in a circuit are highlighted. The article concludes with an overview of experimental realizations.

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On Enhanced Miller Capacitance Effect in Interband Tunnel Transistors

Cited by 205 publications

References 10 publications

Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

Insights Into Tunnel FET-Based Charge Pumps and Rectifiers for Energy Harvesting Applications

The Tunnel Field‐Effect Transistor

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