On-line DLTS investigations of the mono- and di-vacancy in p-type silicon after low temperature electron irradiation

Zangenberg, N.; Goubet, J. J.; Larsen, A. Nylandsted

doi:10.1016/s0168-583x(01)00876-x

Cited by 19 publications

(9 citation statements)

References 11 publications

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“…Zangenberg, Goubet, and Larsen [32] reported that all vacancies formed complexes with dopant boron atoms, which disappeared at about room temperature; however, the concentrations of both V and B were comparable at about 10 15 cm ÿ3 , very different to the situation in the present samples.…”

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confidence: 80%

Monovacancy and Interstitial Migration in Ion-Implanted Silicon

Coleman

Burrows

2007

Phys. Rev. Lett.

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The migration of monovacancies (V0) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V0 and I were created by the in situ implantation of approximately 20 keV helium ions below 50 K. Monitoring the time evolution of the vacancy response during isothermal heating enabled the measurement of activation energies for I and V(0) [corrected] migration of 0.078(7) and 0.46(28) eV, respectively. In highly As-doped Si, partial V annihilation occurs via free I migration, with a second stage of annealing, probably associated with V-As complexes, above room temperature.

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contrasting

confidence: 80%

Monovacancy and Interstitial Migration in Ion-Implanted Silicon

Coleman

Burrows

2007

Phys. Rev. Lett.

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“…At low temperatures, the defect is trapped in one of these states but between 30 and 80 K it is able to switch to the other electronic configuration, surmounting a barrier of 0.044 eV. 2 Deep level transient spectroscopic ͑DLTS͒ studies on e-irradiated boron-doped Si which has been annealed to 150-200 K when vacancies become mobile, reveal three levels at E v + 0.31, E v + 0.37, and E v + 0.11 eV thought to be associated with B s V. [4][5][6] From published data, 4-7 we assess the hole-capture cross sections to be about 6 -10ϫ 10 −16 cm 2 , 1-5ϫ 10 −17 cm 2 and about 4 ϫ 10 −16 cm 2 for the E v + 0.31, E v + 0.37, and E v + 0.11 eV levels, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…The E v + 0.11 eV level is seen by DLTS when the sample is heated at 220 K for 30 min under reverse bias followed by quenching to 80 or 40 K. [4][5][6] The other pair is detected after cooling under zero or forward bias and since this pair of levels always give the same amplitude ratio, they were attributed to the same atomic configuration ͑labeled A͒. 4 The third level, at E v + 0.11 eV, is due to a different configuration labeled B. Configuration B can be converted back to A again by a second anneal, this time under zero bias.…”

Section: Introductionmentioning

confidence: 99%

Theory of boron-vacancy complexes in silicon

et al. 2005

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The substitutional boron-vacancy B s V complex in silicon is investigated using the local density functional theory. These theoretical results give an explanation of the experimentally reported, well established metastability of the boron-related defect observed in p-type silicon irradiated at low temperature and of the two hole transitions that are observed to be associated with one of the configurations of the metastable defect. B s V is found to have several stable configurations, depending on charge state. In the positive charge state the second nearest neighbor configuration with C 1 symmetry is almost degenerate with the second nearest neighbor configuration that has C 1h symmetry since the bond reconstruction is weakened by the removal of electrons from the center. A third nearest neighbor configuration of B s V has the lowest energy in the negative charge state. An assignment of the three energy levels associated with B s V is made. The experimentally observed E v + 0.31 eV and E v + 0.37 eV levels are related to the donor levels of second nearest neighbor B s V with C 1 and C 1h symmetry respectively. The observed E v + 0.11 eV level is assigned to the vertical donor level of the third nearest neighbor configuration. The boron-divacancy complex B s V 2 is also studied and is found to be stable with a binding energy between V 2 and B s of around 0.2 eV. Its energy levels lie close to those of the V 2 . However, the defect is likely to be an important defect only in heavily doped material.

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“…6 From its finger print, the low temperature line is assigned to the single-donor state of the di-vacancy. 9 The high-temperature line, which we will call the AU line in the following, will take the leading part in this paper. Its intensity is always found to be $60% of the intensity of the di-vacancy line.…”

Section: Resultsmentioning

confidence: 99%

In-growth of an electrically active defect in high-purity silicon after proton irradiation

Larsen

Pedersen

Petersen

et al. 2013

Journal of Applied Physics

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Electrically active defects in irradiated 4H-SiC J. Appl. Phys. 95, 4728 (2004); 10.1063/1.1689731Bistable defect in mega-electron-volt proton implanted 4H silicon carbide Defect-related energy levels in the lower half of the band gap of silicon have been studied with transient-capacitance techniques in high-purity, carbon and oxygen lean, plasma-enhanced chemical-vapor deposition grown, n-and p-type silicon layers after 2-MeV proton irradiations at temperatures at or just below room temperature. The in-growth of a distinct line in deep-level transient spectroscopy spectra, corresponding to a level in the band gap at E V þ 0.357 eV where E V is the energy of the valence band edge, takes place for anneal temperatures at around room temperature with an activation energy of 0.95 6 0.08 eV. The line disappears at an anneal temperature of around 450 K. The corresponding defect is demonstrated not to contain boron, carbon, oxygen, or phosphorus. Possible defect candidates are discussed. V C 2013 AIP Publishing LLC.

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On-line DLTS investigations of the mono- and di-vacancy in p-type silicon after low temperature electron irradiation

Cited by 19 publications

References 11 publications

Monovacancy and Interstitial Migration in Ion-Implanted Silicon

Monovacancy and Interstitial Migration in Ion-Implanted Silicon

Theory of boron-vacancy complexes in silicon

In-growth of an electrically active defect in high-purity silicon after proton irradiation

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