Document VersionPublisher's PDF, also known as Version of record Link back to DTU Orbit Citation (APA): Larsen, A. N., Goubet, J. J., Mejlholm, P., Christensen, J. S., Fanciulli, M., Gunnlaugsson, H. P., ... Dannefaer, S. (2000). Tin-vacancy acceptor levels in electron-irradiated n-type silicon. Physical Review B Condensed Matter, 62(7), 4535-4544. DOI: 10.1103/PhysRevB.62.4535 Tin-vacancy acceptor levels in electron-irradiated n-type silicon 18 Sn/cm 3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy ͑Sn-V͒ levels at E c Ϫ0.214 eV and E c Ϫ0.501 eV have been identified ͑E c denotes the conduction band edge͒. Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.

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Isochronal annealing experiments on defects produced by 1.5 MeV electron irradiation at room temperature have been performed on n-type SiGe alloys. Two defects have been studied, labeled P1 and P2, with associated energy levels located at EC−0.32 eV and EC−0.49 eV, respectively, and capture cross sections equal to 1×10−15 cm2 and 2×10−15 cm2. P1 anneals out at 560 K and P2 at 470 K. A comparison with the defects known in Si and Ge allows us to propose the following identification: P1 is associated with the 0/− charge state of the divacancy (V–V)Si and P2 is associated with the 0/− charge state of the E center (P–VSi).

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