On low-frequency noise of polycrystalline GexSi1−x for sub-micron CMOS technologies

Chen, Xuyuan; Johansen, J.A.; Salm, Cora; Rheenen, Arthur D. van

doi:10.1016/s0038-1101(01)00242-8

Cited by 4 publications

(3 citation statements)

References 9 publications

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“…b) As can be seen in Figs. 5 and 6, it is verified that the noise decreases approximately inversely proportional to frequency (1/f ) and it is typical for low frequency noise [18]. c) We found that increasing transconductance G m , results in lower values of 1/f noise.…”

Section: Resultssupporting

confidence: 66%

The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

Jiménez

Manera

Rautemberg

et al. 2010

Phys. Status Solidi (c)

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A reduction of gate depletion and DC characteristics in CMOS transistors with poly‐Si/SiGe Gate stack fabricated with local CMOS process is presented. Our local CMOS process uses a single n+ doped, poly‐Si/SiGe gate material. After deposition, both the poly‐Si and the SiGe used as gate layers were implanted by phosphorus ions. The parameters on threshold, sub‐threshold and low frequency noise 1/f of poly‐Si/SiGe CMOS transistors are reported. Our results demonstrate that the shift in threshold voltage due to the presence of Ge in the gate material is apparent from the p‐MOS and n‐MOS device characteristics. The drive current turn‐on in the I‐V characteristics increases compared with conventional CMOS transistors with poly‐Si gate and devices show low 1/f noise which make them promising devices for RF and microwave circuit applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 66%

The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

Jiménez

Manera

Rautemberg

et al. 2010

Phys. Status Solidi (c)

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“…Some research groups reported an approximately 50% increase with the change of almost one order of temperature variation for the same current level [1]. Others [11][12][13] reported a small decrease or no variation in spectral density with an increase in temperature. Therefore, we conclude that the thermal activation mechanism, which predicts basically temperature-independent spectral density, is the major mechanism for low-frequency noise generation.…”

Section: Discussionmentioning

confidence: 98%

New Model for Low-Frequency Noise in Poly-Si Resistors

Lee¹,

Han²,

Chang

et al. 2005

KEM

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This paper presents a simple and novel model for low-frequency noise generation in polycrystalline-Si resistors within the number fluctuation model. The grain boundary in polycrystalline-Si thin films is the major source of noise and is modeled as independent symmetric Schottky barriers in series, face-to-face. It has been found that trapping and detrapping of the carriers at the traps in the space charge region of the grain boundary via thermal activation modulate the barrier height and generate the low-frequency noise. The model successfully explains the experimental data and gives useful information about the defects in the space charge region of the grain boundary. As a result, the Hooge parameter is interpreted in terms of defect density, among other parameters.

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“…However, the lowfrequency noise in poly-Si 1Ϫx Ge x resistor was less studied. 8,9 In this letter, the low-frequency noise in boron-doped poly-Si 1Ϫx Ge x resistors at various temperatures is investigated. The relationship of noise and Ge content in poly-Si 1Ϫx Ge x resistors can be well predicted using the mobility fluctuation model.…”

mentioning

confidence: 99%

Analysis of low-frequency noise in boron-doped polycrystalline silicon–germanium resistors

Chen¹,

Huang²,

Chiu³

et al. 2002

Applied Physics Letters

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Low-frequency noise in boron-doped polycrystalline silicon-germanium ͑poly-Si 1Ϫx Ge x) resistors at various temperatures is studied. The poly-Si 1Ϫx Ge x films with 0%ϳ36% Ge content were grown using ultrahigh vacuum chemical molecular epitaxy system. We find that the low-frequency noise in poly-Si 1Ϫx Ge x decreases with increasing Ge content, due to the lower potential barrier height of grain boundaries in higher Ge content samples. Moreover, the low-frequency noise decreases with increasing temperature. These results are well explained by the carrier mobility fluctuation model.

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On low-frequency noise of polycrystalline GexSi1−x for sub-micron CMOS technologies

Cited by 4 publications

References 9 publications

The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

New Model for Low-Frequency Noise in Poly-Si Resistors

Analysis of low-frequency noise in boron-doped polycrystalline silicon–germanium resistors

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