2022
DOI: 10.1109/access.2022.3226447
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On Memristors for Enabling Energy Efficient and Enhanced Cognitive Network Functions

Abstract: The high performance requirements of nowadays computer networks are limiting their ability to support important requirements of the future. Two important properties essential in assuring cost-efficient computer networks and supporting new challenging network scenarios are operating energy efficient and supporting cognitive computational models. These requirements are hard to fulfill without challenging the current architecture behind network packet processing elements such as routers and switches. Notably, the… Show more

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Cited by 12 publications
(6 citation statements)
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“…Thus, a substantial improvement in the computing efficiency is achieved when the boundary between the memory and the processing module becomes negligible, which mimics an energy efficient human brain where the processing and memory elements are interlinked. [24][25][26] Memristive materials (we term them MMs) are promising candidates for achieving in-memory computing. [27][28][29][30][31] Upon the application of an external electrical stimulus, the MM system discloses programmable conductance states.…”
Section: Introductionmentioning
confidence: 99%
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“…Thus, a substantial improvement in the computing efficiency is achieved when the boundary between the memory and the processing module becomes negligible, which mimics an energy efficient human brain where the processing and memory elements are interlinked. [24][25][26] Memristive materials (we term them MMs) are promising candidates for achieving in-memory computing. [27][28][29][30][31] Upon the application of an external electrical stimulus, the MM system discloses programmable conductance states.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, a substantial improvement in the computing efficiency is achieved when the boundary between the memory and the processing module becomes negligible, which mimics an energy efficient human brain where the processing and memory elements are interlinked. [ 24–26 ]…”
Section: Introductionmentioning
confidence: 99%
“…The ferroelectric nature, electro-optic properties, nonvolatility, low power consumption, high-speed switching, and the capability for multilevel resistance states collectively position LiNbO 3 as a multifaceted material for developing efficient and brain-inspired computing architectures. Accordingly, the exploration of LiNbO 3 in neuromorphic computing stems from its potential to mimic synaptic behavior and facilitate energy-efficient computing processes (Saleh and Koldehofe, 2022;Xu et al, 2023).…”
Section: Introductionmentioning
confidence: 99%
“…Memristors are solid-state devices characterized by nonlinear electrical properties and tunable resistance that allow them to mimic the synaptic plasticity of the brain and make them suitable for the development of neuromorphic devices. , Memristors are compatible with traditional CMOS technology, and they do not suffer from the von Neumann bottleneck limitation. , Non-von Neumann computing architectures based on memristors are composed of artificial synapses and neurons that perform both data processing and memory functions via in-memory computing. , The collocation of memory and processing units reduces the computational complexity of the computing devices. Additionally, using memristive synapses in non-von Neumann computing devices result in energy-efficient and enhanced cognitive network functions . The idea of memristors was postulated by Chua in 1971, and concretized into a solid-state TiO 2 device in 2008 by the HP lab. , The memory abilities of memristors are usually observed as a pinched hysteresis in the IV (i.e., current–voltage) plot, which is the result of the history-dependent conductance change of the switching material.…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, using memristive synapses in non-von Neumann computing devices result in energy-efficient and enhanced cognitive network functions. 13 The idea of memristors was postulated by Chua in 1971, 14 and concretized into a solid-state TiO 2 device in 2008 by the HP lab. 15,16 The memory abilities of memristors are usually observed as a pinched hysteresis in the IV (i.e., current−voltage) plot, 17−19 which is the result of the historydependent conductance change of the switching material.…”
Section: ■ Introductionmentioning
confidence: 99%