On-product overlay enhancement using advanced litho-cluster control based on integrated metrology, ultra-small DBO targets and novel corrections

Bhattacharyya, Kaustuve; Ke, Chih-Ming; Huang, Guo-Tsai; Chen, Kai-Hsiung; Smilde, Henk-Jan H.; Fuchs, Andreas; Jak, Martin; Schijndel, M. van; Bozkurt, M Murat; Schaar, Maurits van der; Meyer, S.; Un, Miranda; Morgan, Stephen P.; Wu, Jon; Tsai, V W.; Liang, Frida; Boef, Arie den; Berge, P. ten; Kubis, Michael; Wang, Cathy; Fouquet, Christophe; Terng, L. G.; Hwang, David; Cheng, Kevin; Gau, Tsai‐Sheng; Ku, Y. C.

doi:10.1117/12.2011878

Cited by 13 publications

(6 citation statements)

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“…The results in Fig. 4 below show TMU and MAM times obtained on 30 different production layers (immersion layers) using mDBO target sizes of 10  10 mm 2 as well as 16  16 mm 2 from a production YieldStar tool [1]. Note: the highest number between TMU in X and TMU in Y is reported as TMU in the chart.…”

Section: Yieldstar µDbo Technology (In-chip Overlay)mentioning

confidence: 95%

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Advanced litho-cluster control via integrated in-chip metrology

Bhattacharyya

Smilde

Boef

et al. 2013

ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference

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The high-end semiconductor lithography requirements for overlay and focus control in near-future ITRS nodes are at subnanometer level. This development is extremely challenging for the metrology precision and accuracy, as scaling down to the subangstrom level is required for this. On top of the extreme metrology requirements, direct feed-back control of the lithographic steps is needed to meet the future node requirements. Integrated metrology with in-chip measurements, advanced sampling and control-mechanism (using the highest order of correction possible with scanner interface today), are a few of such technologies considered in this publication.

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Section: Yieldstar µDbo Technology (In-chip Overlay)mentioning

confidence: 95%

“…For overlay metrology, the recently introduced µDBO technology offers a solution, where the balance between targetsize, precision and throughput is close to optimum [1]. An example of µDBO-target is shown in figure 1.…”

Section: Introductionmentioning

confidence: 99%

Advanced litho-cluster control via integrated in-chip metrology

Bhattacharyya

Smilde

Boef

et al. 2013

ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference

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“…[1] The correction capabilities depend on the availability of accurate overlay data. The accurate overlay data is required both in time, i.e.…”

Section: Introductionmentioning

confidence: 99%

Target design optimization for overlay scatterometry to improve on-product overlay

et al. 2015

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Scatterometry mark design for improvement of the metrology performance is investigated in this joint work by ASML and STMicroelectronics. The studied marks are small, enabling metrology within the device area. The new mark-design approach reduces the effects from the mark-edges during the metrology measurement. For this, small assist-features are integrated in the mark design on the wafer. Thereby the new designs: 1. enlarge the metrology measurement-window, 2. optimize the repeatability and accuracy of the metrology at given mark size, 3. allow added functionality to existing marks within the current mark area, such as monitoring process asymmetry or multiple layer information, 4. allow for mark miniaturization at equal performance, enabling intra-field positioning. With this metrology tool-optical proximity correction (MT-OPC) included in the mark design, the metrology window is enhanced, while improved on-product overlay performance is obtained.

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“…Recent efforts have allowed the development of μDBO, but regions of the order of 10 μm 2 are still required. 8 In the field of optical microscopy, nanoscale structures such as fluorescent probes or metallic nanoparticles have been widely employed as sample position markers. Using methods that rely on determining the centroid of the point-spread function, lateral resolutions of 10 nm and better have been demonstrated, 9 allowing for single fluorophore imaging with 1.5 nm localization.…”

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confidence: 99%

“…On the other hand, the number of final devices per wafer constitutes a strong constraint in the industry, and reducing the size of DBO gratings represents an active area of research. Recent efforts have allowed the development of μDBO, but regions of the order of 10 μm 2 are still required . In the field of optical microscopy, nanoscale structures such as fluorescent probes or metallic nanoparticles have been widely employed as sample position markers.…”

mentioning

confidence: 99%

All-Optical Self-Referenced Transverse Position Sensing with Subnanometer Precision

et al. 2018

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The emergence of technologies operating at the nanometer scale for applications as varied as nano-fabrication and super-resolution microscopy has driven the need for ever more accurate spatial localization. In this context, nano-structures have been used as 1 probes in order to provide a reference to track lateral drifts in the system. Yet nanometer precision remains challenging and usually involves complicated measurement apparatus. In this work we report a simple method based on symmetry considerations to measure the position of a sub-wavelength nano-structure. For a particular choice of structures, gold nano-particles, we demonstrate a sub-nanometer lateral precision of 0.55 nm. The versatility of the method also allows for the use of different structures, offering a promising opportunity for sub-nanometer positioning accuracy for a wide variety of systems.

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On-product overlay enhancement using advanced litho-cluster control based on integrated metrology, ultra-small DBO targets and novel corrections

Cited by 13 publications

References 0 publications

Advanced litho-cluster control via integrated in-chip metrology

Advanced litho-cluster control via integrated in-chip metrology

Target design optimization for overlay scatterometry to improve on-product overlay

All-Optical Self-Referenced Transverse Position Sensing with Subnanometer Precision

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