On silicon amorphization during different mass ion implantation

Baranova, E. C.; Гусев, В. М.; Martynenko, W. V.; Starinin, C. V.; Haibullin, I. B.

doi:10.1080/00337577308234712

Cited by 84 publications

(25 citation statements)

References 11 publications

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“…The optical properties of silicon can be changed by ion implantation induced amorphization, as discussed by many works in the literature [9], most notably by Baranova et al [10]. The choice of the ions used in this process influences the loss mechanism in the silicon [11], and optical losses up to 500dB/cm have been observed for MeV energy implants of Xe ions at 1 × 10 15 ions/cm 2 implantation dose.…”

Section: Device Fabricationmentioning

confidence: 92%

Laser erasable implanted gratings for integrated silicon photonics

et al. 2011

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Abstract:In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated implanted Bragg gratings with lengths up to 1000µm. Results are also presented, demonstrating that the gratings can be selectively removed by UV pulsed laser annealing, enabling a new concept of laser erasable devices for integrated photonics.

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Section: Device Fabricationmentioning

confidence: 92%

Laser erasable implanted gratings for integrated silicon photonics

et al. 2011

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“…Theoretical and experimental observations in Si indicate that dilute damage is unstable and it easily annihilates due to dynamic annealing. 17,51 On the contrary, compact and big damage structures are more likely to survive dynamic annealing and to accumulate, leading to the growth of bigger damaged regions or amorphous layers. 17,51 To analyze the size of the damaged regions formed in our simulations, generated defects (both self-interstitials and vacancies) were grouped.…”

Section: Implant Cascadesmentioning

confidence: 99%

Molecular dynamics simulations of damage production by thermal spikes in Ge

López¹,

Pelaz²,

Santos³

et al. 2012

Journal of Applied Physics

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Molecular dynamics simulation techniques are used to analyze damage production in Ge by the thermal spike process and to compare the results to those obtained for Si. As simulation results are sensitive to the choice of the inter-atomic potential, several potentials are compared in terms of material properties relevant for damage generation, and the most suitable potentials for this kind of analysis are identified. A simplified simulation scheme is used to characterize, in a controlled way, the damage generation through the local melting of regions in which energy is deposited. Our results show the outstanding role of thermal spikes in Ge, since the lower melting temperature and thermal conductivity of Ge make this process much more efficient in terms of damage generation than in Si. The study is extended to the modeling of full implant cascades, in which both collision events and thermal spikes coexist. Our simulations reveal the existence of bigger damaged or amorphous regions in Ge than in Si, which may be formed by the melting and successive quenching induced by thermal spikes. In the particular case of heavy ion implantation, defect structures in Ge are not only bigger, but they also present a larger net content in vacancies than in Si, which may act as precursors for the growth of voids and the subsequent formation of honeycomb-like structures.

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“…The refractive index change is caused by the silicon amorphization induced by the ion damage in the material [6]. Considering a defect accumulation model [7], in the literature the threshold of silicon to amorphous silicon transition by ion implantation has been associated with a concentration of point defects of approximately 10 22 cm -3 [8].…”

Section: Figure 1 -Fabrication Process For Implanted Gratingsmentioning

confidence: 99%

Very low energy implanted Bragg gratings in SOI for wafer scale testing applications

Loiacono¹,

Topley²,

Nakyobe³

et al. 2011

8th IEEE International Conference on Group IV Photonics

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-We present Bragg gratings with an effective index change introduced by implanting germanium at only 15KeV. An extinction ratio of 35dB at 1350nm is demonstrated for device lengths of 600μm, furthermore laser annealing is demonstrated. IntroductionIn the information age current technologies struggle to deliver the data rates required by modern communications and computer bus systems. Silicon photonics has the potential of overcoming some of these obstacles by relying on a well understood material system and technology [1]. However the full adoption of silicon based photonics would require complex integrated optoelectronic systems to be manufactured in high volumes at low costs. These requirements cannot be met without enabling a wafer scale testing [2] strategy in a similar fashion to what has been happening for many decades in the integrated electronics industry. The current challenge for silicon photonics in this area is represented by the inability of the light signal to access a processed wafer without substantially modifying the wafer surface. Most of the solutions presented for light coupling into test samples rely on substantially modifying the structure of the material to enable end fire coupling, prism coupling [3], inverted tapers [4], and cantilever structures [5]. Introducing these kinds of test points, or even wavelength selective test points such as etched or metal gratings on a processed wafer can potentially introduce undesired alterations of the light propagation, such as scattering and losses, as well as interfering with successive processing steps. In order for optical wafer scale testing to become a viable technology, optical wafer scale testing should be implemented as a minimally intrusive technology. The use of ion implanted optical structures is particularly suited for these applications, as the refractive index change can be introduced on the wafer surface without altering the general topography of the wafer. Furthermore, since the planarity of the wafer is retained, it could be possible to employ these structures for applications that require extensive surface interaction such as bonding or flip chip interactions, and sensing. The use of a low energy/low dose implant conditions (10 15 ion/cm 2 , as opposed to general doping densities which can reach 10 19 ion/cm 2 ) potentially allows minimal optical losses to be introduced by the implantation process.

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On silicon amorphization during different mass ion implantation

Cited by 84 publications

References 11 publications

Laser erasable implanted gratings for integrated silicon photonics

Laser erasable implanted gratings for integrated silicon photonics

Molecular dynamics simulations of damage production by thermal spikes in Ge

Very low energy implanted Bragg gratings in SOI for wafer scale testing applications

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