The
oxidation of tin halide perovskite precursor (THP) with the
solvent dimethyl sulfoxide (DMSO) has intriguing drawbacks. We found
that THP oxidation under progressive stirring can be hindered by the
addition of GeI2. Subsequently, the stirring time of the
precursor solution affects the carrier density and semiconducting
properties of fabricated films, because DMSO can increase the oxidation
induced carrier density. On the other hand, dimethylformamide (DMF)
can suppress the oxidation induced carrier density. After 24 h, an
efficiency of 10.26% is found when DMF is used and 7.12% is found
when DMSO is used as a stirring solvent.