On-state breakdown in power HEMTs: measurements and modeling

Somerville, Mark; Blanchard, R.R.; Duh, K.G.; Chao, P.C.

doi:10.1109/iedm.1997.650446

Cited by 23 publications

(23 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The devices studied in this work are 0.1 m gate length and 25 m gate width double-heterostructure InP power HEMT's on one experimental 3-in wafer from Lockheed Martin Sanders [3], [4]. The heterostructure was grown by molecular-beam epitaxy (MBE) and includes two Si delta-doped layers above and below the channel.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InP HEMT's

Krupenin

Blanchard

Somerville

et al. 2000

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

Abstract-We have developed a methodology to diagnose the physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InAlAs/InGaAs HEMT's on InP. A statistical analysis was carried out on dc figures of merit obtained from a large number of actual devices on an experimental wafer. correlation studies and principal component analysis of the results indicated that variations in Si delta-doping concentration introduced during molecular-beam epitaxy accounted for more than half of the manufacturing variance. Variations in the gate-source distance that is determined by the electron-beam alignment in the gate formation process were found to be the second leading source of manufacturing variance. The statistical methodology used in this work is suitable for continuous process yield diagnostics and improvement in a manufacturing environment.

show abstract

Section: Methodsmentioning

confidence: 99%

“…• P1 has a relatively large impact on the variances of all three breakdown voltages, and the correlation between P1 and these quantities is negative. It is well known that all these breakdown voltages decrease when is increased [4], [10].…”

Section: A Interpretation Of P1mentioning

confidence: 99%

Physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InP HEMT's

Krupenin

Blanchard

Somerville

et al. 2000

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

show abstract

“…As described in [26], the impact-ionization current in a HEMT has been found to exhibit the following dependence on the biasing conditions: In many experiments, in order to enhance the experimental productivity and/or to observe the effects of various bias levels, VDGo ± VT is stepped up in regular time intervals. A graph of such a step-stressing experiment is shown in Fig.…”

Section: Electrical Stressing Methodologymentioning

confidence: 99%

Electrical degradation mechanisms of RF power GaAs PHEMTs

Villanueva

Alamos

Hisaka³

et al.

IEEE International Electron Devices Meeting 2003

View full text Add to dashboard Cite

GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability is of serious concern. Previous studies have identified several distinct degradation phenomena in these devices, but a complete picture has yet to be formed.In this study, we have carried out a comprehensive study of the mechanisms of electrical degradation on a set of experimental RF power GaAs PHEMTs (non-commercial devices provided by our sponsor, Mitsubishi Electric). A wide variety of electrical stressing experiments employing different conditions (varying temperature, bias, environment) were performed on these devices in order to monitor their degradation with stressing.Our general observations showed several forms of degradation, the most concerning being an increase in the drain resistance RD and a reduction in maximum drain current Ima. Contrary to what is often claimed in the literature, our experiments indicated that these forms of degradation were not driven by impact-ionization or hot-electron effects. Instead, we found the degradation to be strongly correlated with temperature, stressing environment, and drain-gate bias, which were all consistent with a corrosion mechanism. Via materials analysis we were able to confirm that the degradation of both RD and I,., were due to surface corrosion on the drain side of the device, albeit at different specific locations. The increase in RD was attributed to oxidation on the n+GaAs ledge, while the reduction in I, was due to oxidation on the AlGaAs surface, closer to the gate.A recoverable negative shift in the threshold voltage VT and a permanent decrease in Rs were also observed during electrical stressing. The shift in VT was attributed to field-assisted tunneling of electrons out of traps under the gate, while the decrease in Rs was found to be consistent with recombination-induced annealing of defects on the source side of the device.

show abstract

“…These current densities are in perfect agreement with the values that can be calculated using the material properties listed in Table I and with the results for the small periphery devices. The off-state breakdown voltage (V BD,off ), which is defined as the drain-source voltage at which the gate leakage current reaches 1.0 mA/mm [8][9] for a completely pinched-off device, has been determined for a 1.0 mm T-gate HEMT with 10 gate fingers in a comb layout. Figure 4 shows that the device broke down at a drain-source voltage of 155 V, before the gate leakage current reached the 1.0 mA/mm level.…”

Section: Large-periphery Devicesmentioning

confidence: 99%

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

et al. 2008

View full text Add to dashboard Cite

We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (W g ) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an optimized process flow comprising a low-power Ar-based plasma after ohmic contact metallization, cleaning of the AlGaN surface prior to the Schottky gate metallization using a diluted ammonia (NH 4 OH) solution, and passivation of the AlGaN surface using a silicon nitride layer deposited by plasma enhanced chemical vapor deposition. We will show that the best RF power performance has been achieved by HEMTs with iron-doped GaN buffer layers (GaN:Fe). Devices with a total gate width of 1 mm yielded a maximum output power of 11.9 W at S-band (2 -4 GHz) under class AB bias conditions (V DS = 40 -60 V, and V GS = -4.65 --4.0 V).

show abstract

On-state breakdown in power HEMTs: measurements and modeling

Cited by 23 publications

References 16 publications

Physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InP HEMT's

Physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InP HEMT's

Electrical degradation mechanisms of RF power GaAs PHEMTs

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

Contact Info

Product

Resources

About