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Background A rapid, accurate, non-invasive diagnostic screen is needed to identify people with SARS-CoV-2 infection. We investigated whether organic semi-conducting (OSC) sensors and trained dogs could distinguish between people infected with asymptomatic or mild symptoms, and uninfected individuals, and the impact of screening at ports-of-entry. Methods Odour samples were collected from adults, and SARS-CoV-2 infection status confirmed using RT-PCR. OSC sensors captured the volatile organic compound (VOC) profile of odour samples. Trained dogs were tested in a double-blind trial to determine their ability to detect differences in VOCs between infected and uninfected individuals, with sensitivity and specificity as the primary outcome. Mathematical modelling was used to investigate the impact of bio-detection dogs for screening. Results 3921 adults were enrolled in the study and odour samples collected from 1097 SARS-CoV-2 infected and 2031 uninfected individuals. OSC sensors were able to distinguish between SARS-CoV-2 infected individuals and uninfected, with sensitivity from 98% (95% CI 95–100) to 100% and specificity from 99% (95% CI 97–100) to 100%. Six dogs were able to distinguish between samples with sensitivity ranging from 82% (95% CI 76–87) to 94% (95% CI 89–98) and specificity ranging from 76% (95% CI 70–82) to 92% (95% CI 88–96). Mathematical modelling suggests that dog screening plus a confirmatory PCR test could detect up to 89% of SARS-CoV-2 infections, averting up to 2·2 times as much transmission compared to isolation of symptomatic individuals only. Conclusions People infected with SARS-CoV-2, with asymptomatic or mild symptoms, have a distinct odour that can be identified by sensors and trained dogs with a high degree of accuracy. Odour-based diagnostics using sensors and/or dogs may prove a rapid and effective tool for screening large numbers of people. Trial Registration NCT04509713 (clinicaltrials.gov).

This paper studies the effect of the strained silicon thickness on the characteristics of strained silicon MOSFETs on SiGe virtual substrates. NMOSFETs were fabricated on strained silicon substrates with various strained silicon thicknesses, both above and below the strained silicon critical thickness. The low field electron mobility and subthreshold characteristics of the devices were measured. Low field electron mobility is increased by about 1.8 times on all wafers and is not significantly degraded on any of the samples, even for a strained silicon thickness far greater than the critical thickness. From the subthreshold characteristics, however, it is shown that the off-state leakage current is greatly increased for the devices on the wafers with a strained silicon thickness that exceeds the critical thickness. The mechanism of the leakage was examined by using photon emission microscopy. Strong evidence is shown that the leakage mechanism is source/drain electrical shorting caused by enhanced dopant diffusion near misfit dislocations.

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