Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

Somerville, Mark; Alamo, J.A. del; Hoke, W. E.

doi:10.1109/55.537079

Cited by 81 publications

(29 citation statements)

References 12 publications

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“…The layer structure consists of a 2550Å InGaAs buffer, a 200Å InGaAs channel, a 300Å pseudo-insulator, and a 70Å InGaAs cap. A delta-doped electron supply layer located 30Å above the channel yields a sheet carrier concentration of cm Fabrication is identical to the devices reported in [8], [12]. Devices with gate lengths m and m were characterized.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, simulations [4] as well as light emission, channel-engineering and body contact experiments [5]- [7] have suggested a link between impact ionization and the kink. Indeed, measurements showing direct correlation between II and the kink have been presented [8]. Several models involving II have been proposed including pure II [9], an SOI-like mechanism [7], hole trap charging [10], and conductivity modulation of the source [11]- [13].…”

Section: Introductionmentioning

confidence: 99%

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Dynamics of the kink effect in InAlAs/InGaAs HEMTs

Ernst

Somerville

Alamo

1997

IEEE Electron Device Lett.

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Abstract-We have carried out pulsed measurements of the kink effect in InAlAs/InGaAs HEMT's on InP with nanosecond resolution. Our measurements show that the kink's characteristic time constant is strongly dependent on VDS, i.e., it drops by more than three decades, from 100 s down to 50 ns, between low and high values of V DS : This suggests that the kink should not be operational for frequencies in the microwave and millimeter wave regimes. We also find that the kink turn-on dynamics correlate with impact ionization. In particular, the inverse of the kink's characteristic time constant follows a classical impact ionization behavior.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dynamics of the kink effect in InAlAs/InGaAs HEMTs

Ernst

Somerville

Alamo

1997

IEEE Electron Device Lett.

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“…A carrier excited to high energy, typically by a high electric field, is able to excite a valence band electron across the band gap, thus creating an electron-hole pair. The process is often detrimental to device performance, limiting the bias at which devices such as field effect transistors can be operated, [1][2][3] whereas other devices such as IMPATT diodes 4 and avalanche photodiodes 5,6 rely on the charge multiplication it produces for their operation.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of impact ionization rates in direct and indirect gap semiconductors

Harrison

Abram

Brand

1999

Journal of Applied Physics

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Impact ionization rates for electrons and holes in three semiconductors with particular band structure characteristics are examined to determine underlying factors influencing their qualitative behavior. The applicability of the constant matrix element approximation is investigated, and found to be good for the indirect gap material studied, but overestimates threshold softness in the direct gap materials. The effect that final states in the ⌫ valley have in influencing characteristics of the rate in the direct gap materials is investigated, and it is found that they play a significantly greater role than the low density of ⌫ valley states would suggest. The role of threshold anisotropy in affecting threshold softness is examined, and it is concluded that it plays only a small part, and that softness is controlled mainly by the slow increase in available phase space as the threshold energy is exceeded.

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“…Since the initiating carrier must supply energy at least equal to the band gap, it must have a sufficiently high kinetic energy typically as a result of excitation by a large electric field. Such large fields exist in small high-speed devices such as field effect transistors, in which case impact ionization is usually detrimental to performance, [1][2][3] or in devices such as IMPATT diodes 4 and avalanche photodiodes, 5,6 whose operation relies on charge multiplication caused by the ionization. Theoretical investigations into the role of impact ionization in carrier transport have been carried out by Wolff, 7 Shockley, 8 Baraff 9 and Ridley, 10 among others.…”

Section: Introductionmentioning

confidence: 99%

Impact ionization rate calculations in wide band gap semiconductors

Harrison

Abram

Brand

1999

Journal of Applied Physics

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. An algorithm for calculating impact ionization rates in the semiclassical Fermi's Golden Rule approximation which is efficient close to threshold is presented. Electron and hole initiated rates are calculated for three semiconductors with particular band structure characteristics, as are the distributions of the generated carriers. Simple analytic expressions of the form RϭA(EϪE 0 ) P are fitted to the calculated rates. The role of the matrix elements in influencing the distribution of final states is investigated. In the direct gap materials, they act to significantly enhance the low-q transitions, while in the indirect gap case they have a lesser effect on the distribution. Results for GaAs obtained here and by several other workers are compared and possible causes of the discrepancies examined, including differences in band structure and approximations made in evaluation of the matrix element. It is found that these differences do not influence the rate sufficiently to account for the wider variation between authors, and so it is concluded that differences in the implementation of the rate integration algorithm are the main cause.

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Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

Cited by 81 publications

References 12 publications

Dynamics of the kink effect in InAlAs/InGaAs HEMTs

Dynamics of the kink effect in InAlAs/InGaAs HEMTs

Characteristics of impact ionization rates in direct and indirect gap semiconductors

Impact ionization rate calculations in wide band gap semiconductors

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