On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts

Yıldırım, N.; Ejderha, Kadir; Türüt, A.

doi:10.1063/1.3517810

Cited by 110 publications

(51 citation statements)

References 53 publications

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“…In our case, the nonideal behavior is probably due to the defects related to the as grown AlGaN semiconductor, such as residual structural defects and dislocations. They can yield a local reduction of the SBH and leads to inhomogeneities in the conduction transport [3,[24][25][26].…”

Section: Resultsmentioning

confidence: 99%

Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature

Akkaya

Esmer

Karaaslan

et al. 2014

Materials Science in Semiconductor Processing

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Section: Resultsmentioning

confidence: 99%

Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature

Akkaya

Esmer

Karaaslan

et al. 2014

Materials Science in Semiconductor Processing

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“…19 In addition to this, IF of 1.04 and higher SBH of 1.15 eV were calculated from I-V measurements for Cu/n-GaN, as compared to the values for Ni/n-GaN where IF and SBH were found to be 1.05 and 0.97 eV, respectively. From the previous reports on Ni/n-GaN Schottky barrier diodes, [13][14][15][16] it has been observed that in this metal/semiconductor diode, the SBH lied in between the values predicted by the Schottky-Mott model 20,21 (φ B = φ m − χ) and the Bardeen model 22 (φ B = (E g /q) − φ o ). Here, φ B is the SBH, φ m is the metal work function, χ is the electron affinity of the semiconductor, E g is the bandgap of the semiconductor, q is the electronic charge and φ o is the energy location of the charge neutrality level.…”

Section: Introductionmentioning

confidence: 99%

Investigation of significantly high barrier height in Cu/GaN Schottky diode

et al. 2016

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Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O) layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

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“…28 A similar deviation of the estimated values of Schottky junction parameters from theoretically predicted values is already reported by other researchers. 29,30 Surface states, interfacial defects, material non-uniformity, dislocation-related current paths, etc., are proposed to be linked with this kind of non-ideal behaviour of Schottky junction parameters. 16,29,31 In addition, a non-ideal behaviour modifies the ideality factor significantly.…”

Section: à2mentioning

confidence: 99%

Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

Chatterjee

Khamari

Porwal

et al. 2018

Journal of Applied Physics

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GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

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On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts

Cited by 110 publications

References 53 publications

Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature

Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature

Investigation of significantly high barrier height in Cu/GaN Schottky diode

Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

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