On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systems

Abstract

Recent successful (110) growth of GaAs on Ge has prompted a reevaluation of the (110) orientation for the MBE growth of zincblende-on-diamond–type heterostructures. It is argued that the atomic geometry at a (110) interface should be particularly favorable for defect-free heteroepitaxy in such systems, for two reasons: (a) Recent work by Harrison et al. has shown that interfaces other than (110) interfaces in such systems must reconstruct. Such reconstruction will be incomplete, leaving behind hard-to-control interface charges. (b) The free-surface reconstruction of the diamond-structure (110) surface is such that it should favor subsequent growth of zincblende structures without antiphase domain boundaries.

Molecular-Beam Epitaxial Growth and Device Potential of Polar/Nonpolar Semiconductor Heterostructures.

“…The simplest of these is the (110) plane. Some experiments in which we had used (110) substrates accidentally, and which had yielded an excellent visual morphology, misled us for several months into believing that the reconstruction thought to be naturally present on this orientation would prevent the other problem, APD formation, from occurring [5]. This, too, proved to be an illusion, and for a while it appeared that the solutions to the APD problem and to the charge imbalance problem were mutually exclusive.…”

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

“…In order to achieve the APD-free GaAs layer on Ge substrate, various growth processes have been developed that include migration enhanced epitaxy (MEE), thermal cycle annealing, and use of substrate offcut. Although, high-quality GaAs/Ge/GaAs DHs have been reported by several researchers [18][19][20][21][22][23][24] including our own results, 25,26 there have been no reports on the minority carrier lifetime and carrier recombination kinetics of molecular beam epitaxy (MBE) grown GaAs/Ge/GaAs heterostructure, and this information is necessary to identify carrier loss mechanisms at each heterointerface. This investigation on MBEgrown lattice-matched GaAs/Ge/GaAs heterostructures will assist further optimization through fundamental understanding of the processes controlling the loss.…”

InAs/GaAs quantum dots on germanium‐on‐insulator‐on‐silicon substrates (GeOI) using molecular beam epitaxy

“…Due to the large lattice mismatch (~4%), a high threading dislocation density [5] (TDD) of ~5x10 7 cm -2 is obtained. Furthermore, one also finds large number of antiphase domains (APDs) that are characteristic features of the polar epitaxy-on-nonpolar substrate [6,7].…”