On the analysis of radiation-induced Single Event Transients on SRAM-based FPGAs

Azimi, Sarah; Sterpone, Luca; Du, Boyang; Boragno, Luca

doi:10.1016/j.microrel.2018.07.135

Cited by 9 publications

(8 citation statements)

References 6 publications

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“…The results we obtained are comparable to the ones reported in [17] for designs B12 and B14. In details, our experiments report for B12 and B14, in case of SET width of 300 ps, PIPB effects of 1.86 and 3.12 respectively.…”

Section: Benhcmark Analysissupporting

confidence: 90%

“…The results of analysis of the benchmark designs are also presented. Finally, these results have been compared with fault injection experiments exposed in [17].…”

Section: Experimental Analysis and Resultsmentioning

confidence: 99%

“…In previous works, LUTs have been used for implementing chain of logical gates to observe their effects on SETs. In [17] and in [18], PIPBs introduced by LUTs with different configurations have been investigated and different behaviors have been observed. In SRAM-based FPGAs, the most part of combinational logic is implemented using LUTs.…”

Section: B Function Generators In Sram-based Fgpas By Xilinxmentioning

confidence: 99%

“…Nevertheless, the full controllability featured by internal electrical injection needs to be supported by an in-depth knowledge of the characteristics of the SETs induced by the real phenomena. In [17] and [18], internal electrical injection has been used and the group of SETs widths to inject has been arbitrarily chosen between 300 ps and 2 ns. It has been reported in [17] and shown in the following subsection that, PIPB effect caused by combinational logic (i.e.…”

Section: Sets Characterizations and Emulationmentioning

confidence: 99%

“…In [17] and [18], internal electrical injection has been used and the group of SETs widths to inject has been arbitrarily chosen between 300 ps and 2 ns. It has been reported in [17] and shown in the following subsection that, PIPB effect caused by combinational logic (i.e. LUTs) in SRAM-based FPGAs is dependent on SETs characteristics.…”

Section: Sets Characterizations and Emulationmentioning

confidence: 99%

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Analyzing Radiation-Induced Transient Errors on SRAM-Based FPGAs by Propagation of Broadening Effect

et al. 2019

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SRAM-based field programmable gate arrays (FPGAs) are widely used in mission-critical applications, such as aerospace and avionics. Due to the increasing working frequency and technology scaling of ultra-nanometer technology, single event transients (SETs) are becoming a major source of errors for these devices. In this paper, we propose a workflow for evaluating the behavior of SETs in SRAMbased FPGAs. The method is able to compute the propagation-induced pulse broadening (PIPB) effect introduced by the logic resources traversed by transient pulses. Besides, we developed an accurate lookup table (LUT) layout model able to effectively predict the kinds of the SETs induced by radiation-particle and to accurately mimic the phenomena of the SET generation and propagation. The proposed methodology is applicable to any recent technology to provide the SET analysis, necessary for an efficient mitigation technology. The experimental results achieved from a set of benchmark circuits mapped on a 28-nm SRAM-based FPGA and compared with the fault injection experiments demonstrate the effectiveness of our technique. INDEX TERMSFunction generator, propagation induced pulse broadening, LUTs, single event transients, SRAM-based FPGA.

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Section: Benhcmark Analysissupporting

confidence: 90%

“…The results of analysis of the benchmark designs are also presented. Finally, these results have been compared with fault injection experiments exposed in [17].…”

Section: Experimental Analysis and Resultsmentioning

confidence: 99%