On the applicability of a semi-analytical approach to determining the transient electron transport response of gallium arsenide, gallium nitride, and zinc oxide

Hadi, Walid A.; Shur, M. S.; O’Leary, Stephen K.

doi:10.1007/s10854-012-0986-0

Cited by 4 publications

(3 citation statements)

References 57 publications

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“…25 Further details of our Monte Carlo simulation approach are presented in the literature. 6,[8][9][10][12][13][14][15][26][27][28][29][30][31][32][33][34][35][36] For the purposes of this analysis, we adopt a set of wurtzite and zinc-blende InN material and band structural parameter selections, and examine the differences in the nature of the resultant steady-state electron transport. We set the wurtzite and zinc-blende InN material and band structural parameters to the values prescribed by Hadi et al, 13,14 with the exception of the degeneracy associated with the zinc-blende InN K-valley; 37,38 see Table II.…”

Section: Monte Carlo Simulationsmentioning

confidence: 99%

Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field

Siddiqua

Hadi

Salhotra

et al. 2015

Journal of Applied Physics

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Section: Monte Carlo Simulationsmentioning

confidence: 99%

Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field

Siddiqua

Hadi

Salhotra

et al. 2015

Journal of Applied Physics

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“…Electron screening is also accounted for following the Brooks-Herring method [230]. Further details of our approach are discussed in the literature [107,109,110,146,151,152,155,160,166,199,[231][232][233][234][235][236][237].…”

Section: Our Monte Carlo Simulation Approachmentioning

confidence: 99%

“…Further analyzes of the steady-state and transient electron transport that occurs within wurtzite ZnO were performed by Hadi et al [198,237,[297][298][299][300]. While a general understanding of the nature of the electron transport processes within wurtzite ZnO has emerged, it is clearly not as well developed as for the case of GaN.…”

Section: Recent Developmentsmentioning

confidence: 99%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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Empirical model for the velocity-field characteristics of semiconductors exhibiting negative differential mobility

Siddiqua

Wang

Shur

et al. 2019

Solid State Communications

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On the applicability of a semi-analytical approach to determining the transient electron transport response of gallium arsenide, gallium nitride, and zinc oxide

Cited by 4 publications

References 57 publications

Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field

Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Empirical model for the velocity-field characteristics of semiconductors exhibiting negative differential mobility

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