On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits

Abstract

This study investigates the possibility of the carbon nanotube (CNT)‐based through‐silicon vias (TSVs) for improving power integrity of 3‐D integrated circuits (3‐D ICs). The circuit model is developed for 2‐bit CNT TSV and validated through the full‐wave electromagnetic simulator HFSS simulations. The 2‐bit CNT TSV is applied to power distribution networks (PDNs) by combining the validated equivalent‐circuit model and that TSV‐based PDN impedance is compared with the traditional one. By virtue of the large capacitance and low inductance of the 2‐bit CNT TSV, the PDN impedance of the 3‐D IC can be suppressed significantly and the anti‐resonant frequency can be increased.