On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Baidus, N. V.; Aleshkin, V. Ya.; Dubinov, A. A.; Krasilnik, Z. F.; Kudryavtsev, K. E.; Nekorkin, S. M.; Новиков, А. В.; Rykov, A. V.; Reunov, D. G.; Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.

doi:10.1134/s1063782618120060

Cited by 3 publications

References 9 publications

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III–V Optoelectronic Devices Grown on Silicon

Tang

Sun

Zhan

et al. 2021

Digital Encyclopedia of Applied Physics

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Silicon‐based optoelectronic devices, including silicon‐based lasers and silicon‐based photodetectors (PDs), are essential parts for silicon‐based optoelectronic integration. With the advancement of material epitaxy technologies such as metal–organic chemical vapor phase epitaxy (MOCVD) and molecular beam epitaxy (MBE), it has become possible to integrate III–V semiconductor optoelectronic devices, especially by monolithic growth, with low‐cost and large‐sized silicon substrates. However, the differences in material properties such as lattice constant, polarity, and thermal expansion coefficient between III–V materials and silicon lead to tremendous challenges in monolithic growth. In recent years, the unique three‐dimensional quantum confinement and defect insensitivity characteristics of quantum dots have greatly improved the performance of optoelectronic devices. This article reviews recent research progress in monolithic growth and optoelectronic devices of III–V semiconductor materials on silicon substrates, emphasizing the development of silicon‐based quantum dot optoelectronic devices.

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III–V Optoelectronic Devices Grown on Silicon

Tang

Sun

Zhan

et al. 2021

Digital Encyclopedia of Applied Physics

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Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD

et al. 2019

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Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

Tsybulenko

Shutov

2020

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Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering. Generally such structures are manufactured by the methods of metal-organic vapor phase epitaxy, metal-organic chemical vapor deposition and molecular-beam epitaxy. However, the methods of deposition from a liquid phase are the most inexpensive and simple yet. Thus obtaining the above mentioned heterostructures from a liquid phase is still promising. In this work we demonstrated the possibility of using the method of scanning liquid phase epitaxy to grow continuous heteroepitaxial layers over the substrate surface highly mismatched by lattice constant and having different crystal-chemical properties. By controlling basic parameters of the method we created the conditions close to the solution-melt saturation limit. In other words, we created the conditions of ultra-fast solution-melt cooling and, respectively, high growth rate. We obtained the heterostructures of Ge layers grown on GaP substrates where the lattice mismatch made 3.7%. Gallium was used as the solvent for Germanium. The heterostructure was grown by the method of scanning liquid phase epitaxy in the conditions of ultra-fast initial cooling of the solution-melt. Overcooling at the crystallization front was controlled by an extra heater of the substrate back side. The growing time was 1 and 20 seconds for the two test samples. The layers thickness was determined by the spherical slice technique to be 1.2 and 1.5 μm for these two growing time values, accordingly. We showed that it was possible to obtain more perfect Ge layers on GaP substrate by lowering the growth rate in the final growth stage. This method can be used to grow heterostructures used in creating such modern electronic and optoelectronic devices as structures based on А3В5 compounds and their solid solutions, which cannot be obtained by other classical methods of liquid phase epitaxy due to significant differences in lattice constants and / or crystal-chemical properties.

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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Cited by 3 publications

References 9 publications

III–V Optoelectronic Devices Grown on Silicon

III–V Optoelectronic Devices Grown on Silicon

Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD

Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

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