On the Bonding and Electrochemical Performance of Sputter Deposited WO₃ Thin Films

Abstract

Tungsten oxide (WO3) thin films have attained a distinct and special place in the field of electrochromism. Therefore, any sort of study towards this material will invariably has lot of importance and technological significance. The films of WO3 were deposited by reactive magnetron sputtering at various partial pressures and annealed at 475°C. There is a tremendous change in the bonding characteristics, which eventually shows significant change in the optical and electrochemical behavior. The bandgap of WO3 films is found to be increasing with different oxygen partial pressure. A systematic study of cyclic voltammetry has been done to analyze the electrochemical behavior of WO3 films. Oxidation and reduction peak currents have shown an increasing trend with the oxygen partial pressure. Raman spectroscopy has revealed the improvement in the atomic ordering in WO3 films.

Enhanced Electrochromic Properties of Nanostructured WO3 Film by Combination of Chemical and Physical Methods

“…Tungsten oxide (WO 3 ) has been regarded as the most promising electrochromic material due to its wide range of continuously adjustable optical properties, excellent reversibility, low energy consumption, high coloration efficiency, and environmental friendliness [1][2][3]. WO 3 films have been used in electrochromic smart windows [4,5], information display [6], photocatalysis [7,8], and energy storage technologies [9,10].…”