On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices

Abstract

We study the calculation of quasi-bound states in nMOS inversion channels and their impact on direct tunneling currents through the dielectric layer. For typical device parameters, the gate leakage in inversion is dominated by this tunneling component. However, a strong inaccuracy arises, if the eigenvalues of the closed system are used for the quasi-bound state tunneling current. We propose simple correction functions to the closed-boundary eigenvalues calculated by the triangular approximation which allows to account for both, continuum and quasi-bound state tunneling in an efficient manner.

ГЛАВА 1. InSb/InAlSb nBn-ГЕТЕРОСТРУКТУРЫ ДЛЯ ИК ФОТОПРИЕМНИКОВ

“…10). Ток прямого туннелирования электронов через барьер может быть рассчитан по модели TSU -ESAKI [13], для электронов в контактном слое InSb, барьер является треугольным либо трапециевидным, для треугольной формы барьера использовалось выражение для коэффициента прохождения из работы [14]. На Рис.…”

Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics

“…Whenever electrons are confined or partially confined in movement, this gives rise to bound or quasi bound states (QBS), and the assumption of continuum tunneling is no longer valid. In the inversion layers of MOS-FETs, a major, if not the dominant, source of tunneling electrons is represented by quasi bound states (11). The QBS tunneling current is proportional to n i /τ i where n i…”

Numerical Analysis of Gate Stacks

“…The direct tunneling current components from both continuum J 3D and quasi-bound states (QBS) J 2D are taken into account according to (14). Following (15), these direct tunneling current components can be estimated by…”