2024
DOI: 10.1109/ted.2023.3284806
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On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs

Abstract: Ideally, de-trapping transients in semiconductors originate from discrete energy levels, and the emission profile follows a pure exponential decay; however, it has been widely shown that this rarely happens in real devices, for which capture and emission processes have a strongly stretched exponential shape. Conventional methodologies for capture/emission time constants mapping (CET maps) are based on the double derivative (DD) or bivariate Gaussian (BG) approximation, which may lead to inaccuracies in the pre… Show more

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