On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide

Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories

“…5) may be a consequence of the hole current increase due to the increase of the tunnel oxide thickness. During erasing, with the considered tunnel oxide thicknesses and electric fields, from [7] and [8] it is possible to estimate that the fraction of hole-to-electron current density is ¡ ¢ £ for sample 'A' and are the same for both samples, we can also assume [5] that is almost the same for both samples. Therefore the hot-hole current increase of sample 'A' with respect to sample 'B' may be expressed as This increase in the hole-current density may be related to a proportional increase of the hole trapping probability and therefore to an increase of the number of erratic bits during cycling.…”