On the correlation between the scanning tunneling microscopy image imperfections and point defects of layered chalcogenides 2HMX2 (M = Mo, W; X = S, Se)

Whangbo, Myung‐Hwan; Ren, Jun; Magonov, S. N.; Bengel, H.; Parkinson, B. A.; Suna, A.

doi:10.1016/0039-6028(94)00800-0

Cited by 50 publications

(57 citation statements)

References 32 publications

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“…Under ambient conditions, we observed that the depressions, measured under high vacuum and UHV conditions, in general were imaged as hillocks, which is consistent with results in [13][14][15]. This observation is also evident from the model given above.…”

Section: Methodssupporting

confidence: 88%

“…Therefore, the majority current dominates for moderate and low doping levels as well. Even the ring structures reported in [11][12][13][14][15] may be explained by the competing current contribution of minority injection and majority extraction. Current investigations using standard and photoassisted scanning tunneling spectroscopy strengthen the validity of the description given above, and will be published in a forthcoming paper.…”

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

“…Various structures such as hillocks, depressions, ring structures or dark and bright atomic spots have been reported [11][12][13][14][15]. Reviews are given by Whangbo et al [13] and Maganov et al [14,15]. However the authors were not able to experimentally relate the different observations to the chemical nature of the investigated dopants and their STM measurements were performed under ambient conditions, so that the influence of adsorbates and tip contamination may have played an important role.…”

mentioning

confidence: 99%

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Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS 2 and WSe 2 by scanning tunneling microscopy

Matthes¹,

Sommerhalter²,

Rettenberger³

et al. 1998

Applied Physics A: Materials Science & Processing

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Abstract. The van-der-Waals surfaces (0001) of the layered structure semiconductors WS 2 and WSe 2 are known to be free of intrinsic surface states. Therefore, they provide an ideal system for investigations of the influence of individual dopants on the local electronic properties, which can be measured by scanning tunneling microscopy (STM). Individual dopant sites were resolved as topographic depressions superimposed on the atomically resolved lattice. The apparent depth of these depressions showed a discrete statistical distribution and was attributed to the spatial depth of the dopant site. Using an STM-induced electrochemical process, we could locally expose the first and second sub-surface layer to correlate the previously recorded topographic contrast to the location of buried dopants. To our knowledge this is the first direct proof of the capability of STM to detect individual sub-surface dopants. An interpretation of the contrast mechanism is given in terms of tip-induced band-bending effects and current transport mechanisms involving minority charge carrier injection and majority charge carrier extraction.

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Section: Methodssupporting

confidence: 88%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS 2 and WSe 2 by scanning tunneling microscopy

Matthes¹,

Sommerhalter²,

Rettenberger³

et al. 1998

Applied Physics A: Materials Science & Processing

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“…Scanning probe microscopy (SPM) is a powerful method to deduce the 3-D topography of nanoparticles supported on a flat substrate. Macroscopic crystals of MoS 2 have been frequently observed by scanning tunneling microscopy (STM) as a substrate of compound semiconductors [13][14][15][16][17], as a conductive support of metal clusters [18], and as a model catalyst for the HDS reaction [19,20]. MoS 2 nanoparticles have been observed by STM on graphite [21,22] and on gold [23][24][25] substrates.…”

Section: Introductionmentioning

confidence: 99%

Microscope Observation of MoS2 Nanoparticles Synthesized on Rutile TiO2 Single Crystals

Uetsuka

Ōnishi

Harada

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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Nanometer-sized particles of MoS2 were synthesized on (100), (001), and (110) surfaces of rutile TiO2. Molybdenum oxide was deposited on the TiO2 substrates and then sulfided to simulate the preparation of industrial catalysts. The nanoparticles which appeared on the sulfided surfaces were assigned to MoS2 particles. The topography of the nanoparticles was observed by atomic force microscopy (AFM) and by transmission electron microscopy (TEM). The number density of the nanoparticles was related to the surface energy of the substrates through the population of nucleation centers. On the TiO2(110) surface, AFM and TEM images assignable to MoS2 crystals edge-bonded to the substrate were observed. The coincidental lattice spacings of MoS2 and this particular surface were related to the observed edge-bonded growth.

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Simulations of STM and AFM Images

Magonov¹,

Whangbo

1995

Surface Analysis With STM and AFM

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On the correlation between the scanning tunneling microscopy image imperfections and point defects of layered chalcogenides 2HMX2 (M = Mo, W; X = S, Se)

Cited by 50 publications

References 32 publications

Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS 2 and WSe 2 by scanning tunneling microscopy

Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS 2 and WSe 2 by scanning tunneling microscopy

Microscope Observation of MoS2 Nanoparticles Synthesized on Rutile TiO2 Single Crystals

Simulations of STM and AFM Images

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