On the design and fabrication of novel lateral bipolar transistor in a deep-submicron technology

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

“…Thin film lateral bipolar transistors (LBTs) on silicon-oninsulator (SOI) (Baliga, 1991;Huang and Baliga, 1991;Kumar and Roulston, 1994;Ryter et al, 1996;Garner et al, 2001) have drawn wide attention in the recent past due to their compatibility with BiCMOS technology and possibility of integration in smart power ICs. This is particularly true for applications in medium voltage range (100-1,000 V) such as display driver or ballast circuits where high voltages LBTs are often used (Nagata et al, 1992;Arborg and Litwin, 1995;Gomez et al, 2000). Several studies have been conducted to improve the breakdown voltage of these LBTs, either by increasing the critical electric field for breakdown (Wondark et al, 1992;Nakagawa et al, 1991;Banna et al, 1997;Amaratunga and Udrea, 2001) or using REdistribution of SURface Field (RESURF) principle (Merchant et al, 1991;Matsudai and Nakagawa, 1992;Lai et al, 1995;Zhang et al, 1999;Ludikhuize, 2000;Vestling et al, 2002) or using novel structures (Lu et al, 1992;Kim et al, 1994;Sunkavalli et al, 1995;Luo et al, 2003;Roig et al, 2004).…”