On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy

Zohta, Yasuhito; Watanabe, Mutsumi

doi:10.1063/1.330683

Cited by 200 publications

(61 citation statements)

References 15 publications

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“…2,3 For example, it is well known that the usual analysis gives an artificially low value of trap concentration ͑the '' effect''͒, because it is based on the assumption that the forward bias pulse fills all traps in the depletion region, whereas some of the deeper traps are not empty before the pulse. [2][3][4] At higher reverse biases the apparent trap concentration will increase and, in fact, an analysis of signal height versus forward bias voltage can often be used to determine the true trap concentration, if it is constant with depth. 5 Sometimes, however, the apparent trap concentration decreases as reverse bias increases ͑becomes more negative͒, which is the opposite of what is expected.…”

Section: Characterization Of Near-surface Traps In Semiconductors: Ganmentioning

confidence: 99%

Characterization of near-surface traps in semiconductors: GaN

Fang

2001

Applied Physics Letters

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We present a simple a criterion, based on deep-level transient spectroscopy peak heights S(Vr) at two or more values of reverse bias Vr, to unequivocally determine whether or not a particular semiconductor trap is of bulk or near-surface nature. Moreover, we present an expression for S(Vr) with fitting parameters φB, the Schottky barrier height; δ, the trap penetration depth; and NT, the trap density. Application of the method to a thick, high-quality, epitaxial GaN layer, reveals two common traps which penetrate only 2700±300 Å into the layer.

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Section: Characterization Of Near-surface Traps In Semiconductors: Ganmentioning

confidence: 99%

Characterization of near-surface traps in semiconductors: GaN

Fang

2001

Applied Physics Letters

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“…19 The trap depth profiles show a progressive decrease with depth within the region probed, suggesting that this trap is a consequence of the bombardment of the near-surface region with the plasma species. It should also be noted that although a reverse bias of À5 V has been used for all the depth profile measurements, different depth regions have been probed due to the dependence of the depletion width, w, on the doping concentration as given by…”

Section: Resultsmentioning

confidence: 99%

Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure

Nyamhere

Venter

Auret

et al. 2012

Journal of Applied Physics

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Bulk antimony (Sb) doped germanium (n-Ge) samples with doping concentrations ranging between 7.0 × 1014 cm−3 and 2.5 × 1015 cm−3 were exposed to a dc-hydrogen or helium plasma. Hydrogen exposure resulted in the introduction of a single prominent defect level at EC −0.31 eV. Exposing similar samples to He plasmas introduced the same electron trap. The trap concentration increased linearly with dopant concentration suggesting that Sb may be a component of this plasma-induced trap. Thermal annealing kinetics studies suggested that this defect anneals out by diffusion.

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“…The aim of depth profiling was to find the defect concentration as a function of depth for individual defects. Fixed bias-variable pulse Laplace-DLTS depth profiling [6,23] was used to measure the depth distribution of the defects investigated in this study. For each defect, the temperature was kept constant, the reverse bias of -2V was maintained while varying the filling pulse.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characterisation of electron beam exposure induced Defects in silicon

Danga

Auret

Coelho

et al. 2016

Physica B: Condensed Matter

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The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 m below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.

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On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy

Abstract: It is pointed out that a widely used simple formula may give rise to serious errors in profiling deep level concentrations from capacitance transient experiments. A correction formula is derived based on the space-charge analysis.

Cited by 200 publications

References 15 publications

Characterization of near-surface traps in semiconductors: GaN

Characterization of near-surface traps in semiconductors: GaN

Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure

Electrical Characterisation of electron beam exposure induced Defects in silicon

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