On the device design assessment of multigate FETs (MuGFETs) using full process and device simulation with 3D TCAD

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

“…Tri-gate (TG) MOSFETs, like FinFETs, are considered to be the best candidates for sub-100 nm scaling of MOSFETs due to their multi-gate immunity to short channel effects (SCEs), proximity to standard bulk planar CMOS processing, feasibility for digital/analogue circuit applications and low power consumption [1][2][3][4][5][6][7][8]. Little work has been done towards the development of analytical expression for the threshold voltage of TG MOSFETs which is usually not fully analytical [9,10], whereas no experimental data were used to verify its validity.…”

Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

“…The performance of these transistors is expected to be severely degraded by short-channel effects (SCEs). For sub-100 nm scaling of MOSFETs, triple-gate field-effect transistors like FinFETs have attracted considerable attention due to their immunity to SCEs and proximity to standard bulk planar CMOS processing [2][3][4][5][6][7]. Since the advanced triple-gate FinFETs require ultra-thin gate dielectrics, gate tunneling currents may affect the drain leakage current in the subthreshold region of operation, leading to a substantial increase of the leakage energy which is harmful for applications in circuits of low power consumption.…”

A fast TCAD-based methodology for Variation analysis of emerging nano-devices

“…During the recent years, TCAD has been used for the simulation of emerging nano-devices such as Multigate FETs [14] and CMOS/Flash devices [13]. Moving towards deep submicron technologies, the process simulation and physical model of devices becomes more complex.…”