On the distribution function of activation barriers surmounted by charge carriers when captured to slow surface states of a semiconductor

Козлов, С. Н.; Levshin, N. L.

doi:10.1002/pssa.2210640265

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1981

1987

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On the nature and energy spectrum of surface recombination centres

Grinev

Kiselev

1981

Phys. Stat. Sol. (a)

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The effect of adsorption‐desorption processes on recombination and capture of charge carriers on real germanium surfaces is investigated. It is shown that the quasicontinuous energy spectrum of recombination levels is independent of the spectrum of fast states. Changes in the parameters of the spectrum of recombination centres in adsorption are associated with the rearrangement of the disordered surface phase as a result of creation of new surface chemical complexes. A possible model of surface recombination centres is discussed.

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