1987
DOI: 10.1007/978-3-642-83020-4_9
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Proton Processes on the Surfaces of Semiconductors and Insulators

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Cited by 7 publications
(14 citation statements)
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“…Photoexcitation of band delocalized electronic states associated with regular lattice and intragap localized electronic states associated with lattice irregularities or defects in an insulating solid with a large band gap, e.g., ZrO 2 , gives rise to a variety of photophysical and photochemical processes, the nature of which depends on the type of interaction between the incident light and the solid's subsystem and on the experimental approach used. Taking into consideration the types of initial and final electronic states involved in light-induced electronic transitions, three cases can be delineated: (i) intradefect transitions (both states are localized), (ii) band-to-band transitions (both states are delocalized), and (iii) defect-to-band transitions (initial state is localized, final state is delocalized) or band-to-defect transitions (initial state is delocalized, final state is localized) .…”
Section: Introductionmentioning
confidence: 99%
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“…Photoexcitation of band delocalized electronic states associated with regular lattice and intragap localized electronic states associated with lattice irregularities or defects in an insulating solid with a large band gap, e.g., ZrO 2 , gives rise to a variety of photophysical and photochemical processes, the nature of which depends on the type of interaction between the incident light and the solid's subsystem and on the experimental approach used. Taking into consideration the types of initial and final electronic states involved in light-induced electronic transitions, three cases can be delineated: (i) intradefect transitions (both states are localized), (ii) band-to-band transitions (both states are delocalized), and (iii) defect-to-band transitions (initial state is localized, final state is delocalized) or band-to-defect transitions (initial state is delocalized, final state is localized) .…”
Section: Introductionmentioning
confidence: 99%
“…Extrinsic absorption by solids normally occurs at lower energies. Note that extrinsic surface absorption is at times red-shifted by a few electronvolts relative to the intrinsic fundamental absorption edge of wide band gap insulators. ,, …”
Section: Introductionmentioning
confidence: 99%
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“…The hydroxides of metals being rather simple of the aprotic centers of oxides' surface, were successfully observed for modeling complexation of metal oxide M(OH) n (M = Na, Mg, Al, Sc, Cu, Zn, Y) with carbon monoxide 12, 13. The studying of electronic effects of similar systems expediently and consequently, that active sites of a real heterogeneous surface of many catalysts contain group M‐O‐H 14, 15. At the beginning of the present work the results for molecular models of copper hydroxides: Cu(OH) δitalicn, where δ = −1, 0, +1; n = 1, 2, and 3 with molecules CO and NO are given at first.…”
Section: Methods Of Calculationsmentioning
confidence: 99%
“…Because the thickness of the analyzed layer is ≈5 nm, it should be considered that a layer with a structure that differs from the bulk structure by an increased content of small Si-O structures may form on the surface of the studied samples during preparation. The thickness of this destroyed layer is ≈1 nm [39]. Based on atomic-force microscopy, we determined the surface area of glassy and crystalline quartz chips and estimated the contribution of the destroyed layer to the x-ray-electron spectra.…”
mentioning
confidence: 99%