On the donor-vacancy type complexes in germanium

Emtzev, V. V.; Mashovets, T.V.; Maximov, M. V.; Vitovskii, N.A.

doi:10.1080/00337577108231048

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1972

1988

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“…[12] VD COMPLEX [11,17] VD COMPLEX [11] VVLi COMPLEX [17] WD COMPLEX [18] WD COMPLEX [16,19] ACCEPTOR [1][2][3]9] Figure 3. Energy level scheme comparing features detected in IRR measurements on germanium diodes (A) with levels resulting from radiation or thermal damage (B) . References are given in brackets.…”

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confidence: 99%

Methods of measurement for semiconductor materials, process control, and devices quarterly report :

1973

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mentioning

confidence: 99%

Methods of measurement for semiconductor materials, process control, and devices quarterly report :

1973

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Vacancy–donor complexes in γ-irradiated phosphorus-doped germanium

Емцев

Korkhashkina

Mashovets

1972

Phys. Stat. Sol. (a)

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It is shown that the n–p conversion of phosphorus‐doped Ge under γ‐irradiation is related to a concentration decrease of the P donor states. This might be explained by the fact that generated lattice vacancies can be trapped by substitutional atom impurities. An energy level introduced by γ‐irradiation could not be associated with the VP complex, thus the electronic states of this centre are obviously located in the valence band. The concentration of the (Ev + 0.12) eV acceptor level increases after the n–p conversion. This level is most likely associated with the donor–divacancy complex. When the “ultimate state” is achieved the Fermi level coincides with the group III acceptor level at 0 °K.

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Effect of neutron irradiation on responsivity of p-i-n photodetectors

Gedam

Banerjee

Mitra

1988

Journal of Applied Physics

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Neutron irradiation induced degradation in the responsivity of Si and Ge p-i-n photodetectors has been studied. The responsivity of an irradiated photodetector normalized to its preirradiation responsivity was found to have a spectral dependence in the case of the Si photodetector. In the case of the Ge photodetector, the relative responsivity was found to be independent of wavelength in the most part of the spectrum covered in the experiment.

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On the donor-vacancy type complexes in germanium

Cited by 4 publications

References 4 publications

Methods of measurement for semiconductor materials, process control, and devices quarterly report :

Methods of measurement for semiconductor materials, process control, and devices quarterly report :

Vacancy–donor complexes in γ-irradiated phosphorus-doped germanium

Effect of neutron irradiation on responsivity of p-i-n photodetectors

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