T.V. Mashovets scite author profile

The kinetics of the Frenkel pair accumulation in Ge and Si under low‐temperature γ‐ or electron‐irradiation is investigated. The essential role of ionization‐enhanced annihilation of interstitials and vacancies during irradiation is found. A drift‐diffusion mechanism of the annihilation is proposed. Under suitable conditions this process can provide nearly complete annihilation of the generated pairs. The distribution of the Frenkel pairs over the distances between their components is derived from a comparison of the calculated and experimental results.

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Ionization mechanisms of defect production in semiconductors

Mashovets¹,

Емцев²

1983

Physica B+C

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T.V. Mashovets

Defect formation in solids by decay of electronic excitations

Frenkel pairs in silicon and germanium

The Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it?

The spatial distribution of frenkel pair components created in germanium and silicon under irradiation

Ionization mechanisms of defect production in semiconductors

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