Ionization mechanisms of defect production in semiconductors

Variation of Carrier Removal Rate with Irradiation Dose in Fast-Pile Neutron Irradiated n-Si

“…The concentration of defects: (+) A-centre; (1, Ã) G16-centre and divacancies; (2) I-centre in the conducting matrix of Cz n-Si (n 0 1.21 Â 10 14 cm ±3 ) as a function of fast-pile neutron fluence From comparison of the curves 2 in Figs. 5 and 6, one can see that the function I(f m ) is larger in the FZ n-Si than in Cz n-Si by about two orders, because the oxygen is known to be a recombination centre, as the donors in 5th-group Ge [13]. After an irradiation dose of 3.8 Â 10 13 in Cz n-Si and 3.2 Â 10 13 in FZ n-Si, concentrations of A-and CiCscentres are decreased.…”

“…Therefore, for a coordination of the expressions for spherical cluster with the received expressions for clusters having by a smaller depolarizing field, it is necessary to consider B* 2B and L x is calculated from (13).…”

Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors

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